fast rcovery diode

RF101L2S Diodes 1/2 Fast recovery Diode RF101L2S zApplications High frequency rectification zFeatures 1) Small power mold type (PMDS) 2) Ultra low VF 3) Very fast recovery 4) Low switching loss zConstruction Silicon epitaxial planar zExternal dimensions (Unit : mm) 0.1 CATHODE MARK 4. 5± 0. 2 2.6±0.2 2.0±0.2 1. 2± 0. 3 1.5±0.2 5. 0± 0. 3 +0.02 −0.1 EX. RF101L2S → 6 , 6 EX. 2003,09 → 3 , 9 1 2 3 4 , ···Type No.1 2∗ , ···Manufacturing date3 4 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Reverse voltage (repetitive peak) VRM 200 V Reverse voltage (DC) VR 200 V Average rectified forward current ∗ IO 1.0 A IFSM 20 A Junction temperature 150 °C Storage temperature −55 to +150 °C ∗ Mounting on glass epoxi board Tj Tstg Forward peak surge current (60Hz 1cyc.) zElectrical characteristics (Ta=25°C) Parameter Symbol Max. Unit Conditions Forward voltage VF 0.870 V IF=1.0A Reverse current IR 10µ A VR=200V Reverse recovery time IF=0.5A IR=1.0Atrr Typ. 0.815 10n 12 25 nS Note) ESD sensitive product handing required. Irr=0.25 IR+ RF101L2S Diodes 2/2 zElectrical characteristic curves (Ta=25°C) Fig.1 Forward temperature characteristics 0 0.2 0.4 0.6 0.8 1 1000 100 10 1 125°C FO RW AR D C UR RE NT : IF (m A) FORWARD VOLTAGE : VF (V) 75°C 25°C −25°C Fig.2 Reverse temperature characteristics 0 10000 1000 100 10 1 0.1 50 100 150 200 REVERSE VOLTAGE : VR (V) RE VE RS E C UR RE NT : IR (nA ) 125°C 75°C 25°C −25°C 0 0 2.0 0.8 1.0 1.2 1.4 1.6 1.8 0.6 0.4 0.2 25 75 12550 100 150 AV ER AG E R EC TI FI ED C UR RE NT : IO (A ) AMBIENT TEMPERATURE : Ta (°C) Fig.3 Derating curve DC D=1/2 Sin(θ=180) T t IO 0A 0V VR D=t / T VR=200V Tj=150°C 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 FO RW AR D P O W ER D IS SI PA TI O N : P F (W ) AVERAGE RECTIFIED FORWARD CURRENT : IO (A) Fig. 4 Power dissipation characteristics DC D=1/2 Sin(θ=180) 0 20 25 15 10 5 1 10 100 CYCLE SU RG E F O RW AR D C UR RE NT : IFS M (A ) Fig.5 Forward peak surge current 8.3ms 8.3ms 1cycle sin wave IFS M 0 5 10 15 20 25 30 100 10 0 CA PA CI TA NC E B ET W EE N T ER M IN AL S : C T (pF ) REVERSE VOLTAGE : VR (V) Fig. 6 Capacitance between terminals characteristics 0 0 6 8 10 12 14 16 18 20 0.25 0.5 0.75 1 1.5 1.25 FO RW AR D CU RR EN T : I F(A ) RECOVERY TIMES: trr (ns) Fig. 7 Reverse recovery time IR=1.0A Irr=0.25 IR+