©2000 Fairchild Semiconductor International
www.fairchildsemi.com
Rev. .5.0
Features
• Precision fixed operating frequency
• KA1M0565R (67KHz),KA1H0565R (100KHz)
• Pulse by pulse over current limiting
• Over load protection
• Over voltage protection (Min. 23V)
• Internal thermal shutdown function
• Under voltage lockout
• Internal high voltage sense FET
• Auto restart
Description
The SPS product family is specially designed for an off-line
SMPS with minimal external components. The SPS consist
of high voltage power SenseFET and current mode PWM
controller IC. PWM controller features integrated fixed oscil-
lator, under voltage lock out, leading edge blanking, opti-
mized gate turn-on/turn-off driver, thermal shut down
protection, over voltage protection, temperature compensated
precision current sources for loop compensation and fault
protection circuit. Compared to discrete MOSFET and con-
troller or RCC switching converter solution, a SPS can
reduce total component count, design size, weight and at the
same time increase & efficiency, productivity, and system
reliability. It has a basic platform well suited for cost effec-
tive design in either a flyback converter or a forward con-
verter.
TO-220F-4L
1. GND 2. DRAIN 3. VCC 4. FB
1
Internal Block Diagram
#3 VCC
32V
5µA
9V
2.5R
1R
1mA
0.1V
+
−
OVER VOLTAGE S/D
+
−
7.5V
25V
Thermal S/D
S
R
Q
Power on reset
+
−
L.E.B
S
R
Q
OSC
5V
Vref
Internal
bias
Good
logic
SFET
#2 DRAIN
#1 GND
#4 FB
KA1M0565R/KA1H0565R
Fairchild Power Switch(SPS)
KA1M0565R/KA1H0565R
2
Absolute Maximum Ratings
Notes:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=30mH, VDD=50V, RG= 27Ω, starting Tj=25°C
Parameter Symbol Value Unit
Drain-source (GND) voltage (1) VDSS 650 V
Drain-Gate voltage (RGS=1MΩ) VDGR 650 V
Gate-source (GND) voltage VGS ±30 V
Drain current pulsed (2) IDM 20 ADC
Single pulsed avalanche energy (3) EAS 230 mJ
Continuous drain current (TC=25°C) ID 5.0 ADC
Continuous drain current (TC=100°C) ID 3.5 ADC
Supply voltage VCC 30 V
Analog input voltage range VFB −0.3 to VSD V
Total power dissipation
PD 140 W
Derating 1.11 W/°C
Operating temperature TOPR −25 to +85 °C
Storage temperature TSTG −55 to +150 °C
KA1M0565R/KA1H0565R
3
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Note:
Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%
Parameter Symbol Condition Min. Typ. Max. Unit
Drain-source breakdown voltage BVDSS VGS=0V, ID=50µA 650 - - V
Zero gate voltage drain current IDSS
VDS=Max., Rating,
VGS=0V
- - 50 µA
VDS=0.8Max., Rating,
VGS=0V, TC=125°C
- - 200 µA
Static drain-source on resistance (note) RDS(ON) VGS=10V, ID=2.5A - 1.76 2.2 Ω
Forward transconductance (note) gfs VDS=50V, ID=2.5A 2.5 - - S
Input capacitance Ciss
VGS=0V, VDS=25V,
f=1MHz
- 1457 -
pFOutput capacitance Coss - 130 -
Reverse transfer capacitance Crss - 38.8 -
Turn on delay time td(on) VDD=0.5BVDSS, ID=5.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
- - 60
nS
Rise time tr - - 150
Turn off delay time td(off) - - 300
Fall time tf - - 130
Total gate charge
(gate-source+gate-drain) Qg
VGS=10V, ID=5.0A,
VDS=0.5BVDSS (MOSFET
switching time are
essentially independent of
operating temperature)
- - 56
nCGate-source charge Qgs - 10.3 -
Gate-drain (Miller) charge Qgd - 22.3 -
S 1
R
----=
KA1M0565R/KA1H0565R
4
Electrical Characteristics (CONTROL part)
(Ta=25°C unless otherwise specified)
Notes:
(1) These parameters, although guaranteed, are not 100% tested in production
(2) These parameters, although guaranteed, are tested in EDS (wafer test) process
Parameter Symbol Condition Min. Typ. Max. Unit
REFERENCE SECTION
Output voltage (1) Vref Ta=25°C 4.80 5.00 5.20 V
Temperature Stability (1)(2) Vref/∆T −25°C≤Ta≤+85°C - 0.3 0.6 mV/°C
OSCILLATOR SECTION
Initial accuracy FOSC
KA1M0565R 61 67 73
kHz
KA1H0565R 90 100 110
Frequency change with temperature (2) ∆F/∆T −25°C≤Ta≤+85°C - ±5 ±10 %
PWM SECTION
Maximum duty cycle Dmax
KA1M0565R 74 77 80
%
KA1H0565R 64 67 70
FEEDBACK SECTION
Feedback source current IFB Ta=25°C, 0V≤Vfb≤3V 0.7 0.9 1.1 mA
Shutdown delay current Idelay Ta=25°C, 5V≤Vfb≤VSD 4.0 5.0 6.0 µA
OVER CURRENT PROTECTION SECTION
Over current protection IL(max) Max. inductor current 3.08 3.5 3.92 A
UVLO SECTION
Start threshold voltage Vth(H) - 14 15 16 V
Minimum operating voltage Vth(L) After turn on 9 10 11 V
TOTAL STANDBY CURRENT SECTION
Start current IST VCC=14V 0.1 0.3 0.4 mA
Operating supply current
(control part only) IOPR Ta=25°C 6 12 18 mA
VCC zener voltage VZ ICC=20mA 30 32.5 35 V
SHUTDOWN SECTION
Shutdown Feedback voltage VSD - 6.9 7.5 8.1 V
Thermal shutdown temperature (Tj) (1) TSD - 140 160 - °C
Over voltage protection voltage VOVP - 23 25 28 V
KA1M0565R/KA1H0565R
5
Typical Performance Characteristics
(These characteristic graphs are normalized at Ta=25°C)
Fig.1 Operating Frequency
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Fosc
Fig.2 Feedback Source Current
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Ifb
Fig.3 Operating Current
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Iop
Fig.4 Max Inductor Current
0.8
0.85
0.9
0.95
1
1.05
1.1
-25 0 25 50 75 100 125 150
Ipeak
Fig.5 Start up Current
0.5
0.7
0.9
1.1
1.3
1.5
-25 0 25 50 75 100 125 150
Istart
Fig.6 Start Threshold Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vstart
Temperature [°C] Temperature [°C]
Temperature [°C] Temperature [°C]
Temperature [°C]Temperature [°C]
Figure 1. Operating Frequency Figure 2. Feedback Source Current
Figure 3. Operating Current Figure 4. Max. Inductor Current
Figure 5. Start up Current Figure 6. Start Threshold Voltage
IL(MAX)
IST Vth(H)
IFB
lOPR
KA1M0565R/KA1H0565R
6
Typical Performance Characteristics (Continued)
(These characteristic graphs are normalized at Ta=25°C)
Fig.7 Stop Threshold Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vstop
Fig.8 Maximum Duty Cycle
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Dmax
Fig.9 Vcc Zener Voltage
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Vz
Fig.10 Shutdown Feedback Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vsd
Fig.11 Shutdown Delay Current
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Idelay
Fig.12 Over Voltage Protection
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vovp
Temperature [°C] Temperature [°C]
Temperature [°C] Temperature [°C]
Temperature [°C]Temperature [°C]
Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle
Figure 9. VCC Zener Voltage Figure 10. Shutdown Feedback Voltage
Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection
Vth(L)
KA1M0565R/KA1H0565R
7
Typical Performance Characteristics (Continued)
(These characteristic grahps are normalized at Ta=25°C)
Fig.14 Drain Source Turn-on
Resistance
0
0.5
1
1.5
2
2.5
-25 0 25 50 75 100 125 150
Rdson
Temperature [°C]
Figure 13. Drain Source Turn-on Resistance
KA1M0565R/KA1H0565R
8
Package Dimensions
TO-220F-4L
KA1M0565R/KA1H0565R
9
Package Dimensions (Continued)
TO-220F-4L (Forming)
KA1M0565R/KA1H0565R
10
Ordering Information
TU : Non Forming Type
YDTU : Forming Type
Product Number Package Rating Fosc
KA1M0565R-TU TO-220F-4L
650V, 5A 67kHz
KA1M0565R-YDTU TO-220F-4L(Forming)
KA1H0565R-TU TO-220F-4L
650V, 5A 100kHz
KA1H0565R-YDTU TO-220F-4L(Forming)
KA1M0565R/KA1H0565R
11
KA1M0565R/KA1H0565R
9/7/00 0.0m 001
Stock#DSxxxxxxxx
2000 Fairchild Semiconductor International
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instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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