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KA1M0565R 内置开关

2011-09-12 12页 pdf 74KB 70阅读

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KA1M0565R 内置开关 ©2000 Fairchild Semiconductor International www.fairchildsemi.com Rev. .5.0 Features • Precision fixed operating frequency • KA1M0565R (67KHz),KA1H0565R (100KHz) • Pulse by pulse over current limiting • Over load protection • Over voltage protection (Min. 23V) ...
KA1M0565R 内置开关
©2000 Fairchild Semiconductor International www.fairchildsemi.com Rev. .5.0 Features • Precision fixed operating frequency • KA1M0565R (67KHz),KA1H0565R (100KHz) • Pulse by pulse over current limiting • Over load protection • Over voltage protection (Min. 23V) • Internal thermal shutdown function • Under voltage lockout • Internal high voltage sense FET • Auto restart Description The SPS product family is specially designed for an off-line SMPS with minimal external components. The SPS consist of high voltage power SenseFET and current mode PWM controller IC. PWM controller features integrated fixed oscil- lator, under voltage lock out, leading edge blanking, opti- mized gate turn-on/turn-off driver, thermal shut down protection, over voltage protection, temperature compensated precision current sources for loop compensation and fault protection circuit. Compared to discrete MOSFET and con- troller or RCC switching converter solution, a SPS can reduce total component count, design size, weight and at the same time increase & efficiency, productivity, and system reliability. It has a basic platform well suited for cost effec- tive design in either a flyback converter or a forward con- verter. TO-220F-4L 1. GND 2. DRAIN 3. VCC 4. FB 1 Internal Block Diagram #3 VCC 32V 5µA 9V 2.5R 1R 1mA 0.1V + − OVER VOLTAGE S/D + − 7.5V 25V Thermal S/D S R Q Power on reset + − L.E.B S R Q OSC 5V Vref Internal bias Good logic SFET #2 DRAIN #1 GND #4 FB KA1M0565R/KA1H0565R Fairchild Power Switch(SPS) KA1M0565R/KA1H0565R 2 Absolute Maximum Ratings Notes: 1. Tj=25°C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=30mH, VDD=50V, RG= 27Ω, starting Tj=25°C Parameter Symbol Value Unit Drain-source (GND) voltage (1) VDSS 650 V Drain-Gate voltage (RGS=1MΩ) VDGR 650 V Gate-source (GND) voltage VGS ±30 V Drain current pulsed (2) IDM 20 ADC Single pulsed avalanche energy (3) EAS 230 mJ Continuous drain current (TC=25°C) ID 5.0 ADC Continuous drain current (TC=100°C) ID 3.5 ADC Supply voltage VCC 30 V Analog input voltage range VFB −0.3 to VSD V Total power dissipation PD 140 W Derating 1.11 W/°C Operating temperature TOPR −25 to +85 °C Storage temperature TSTG −55 to +150 °C KA1M0565R/KA1H0565R 3 Electrical Characteristics (SFET part) (Ta=25°C unless otherwise specified) Note: Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2% Parameter Symbol Condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS VGS=0V, ID=50µA 650 - - V Zero gate voltage drain current IDSS VDS=Max., Rating, VGS=0V - - 50 µA VDS=0.8Max., Rating, VGS=0V, TC=125°C - - 200 µA Static drain-source on resistance (note) RDS(ON) VGS=10V, ID=2.5A - 1.76 2.2 Ω Forward transconductance (note) gfs VDS=50V, ID=2.5A 2.5 - - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 1457 - pFOutput capacitance Coss - 130 - Reverse transfer capacitance Crss - 38.8 - Turn on delay time td(on) VDD=0.5BVDSS, ID=5.0A (MOSFET switching time are essentially independent of operating temperature) - - 60 nS Rise time tr - - 150 Turn off delay time td(off) - - 300 Fall time tf - - 130 Total gate charge (gate-source+gate-drain) Qg VGS=10V, ID=5.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent of operating temperature) - - 56 nCGate-source charge Qgs - 10.3 - Gate-drain (Miller) charge Qgd - 22.3 - S 1 R ----= KA1M0565R/KA1H0565R 4 Electrical Characteristics (CONTROL part) (Ta=25°C unless otherwise specified) Notes: (1) These parameters, although guaranteed, are not 100% tested in production (2) These parameters, although guaranteed, are tested in EDS (wafer test) process Parameter Symbol Condition Min. Typ. Max. Unit REFERENCE SECTION Output voltage (1) Vref Ta=25°C 4.80 5.00 5.20 V Temperature Stability (1)(2) Vref/∆T −25°C≤Ta≤+85°C - 0.3 0.6 mV/°C OSCILLATOR SECTION Initial accuracy FOSC KA1M0565R 61 67 73 kHz KA1H0565R 90 100 110 Frequency change with temperature (2) ∆F/∆T −25°C≤Ta≤+85°C - ±5 ±10 % PWM SECTION Maximum duty cycle Dmax KA1M0565R 74 77 80 % KA1H0565R 64 67 70 FEEDBACK SECTION Feedback source current IFB Ta=25°C, 0V≤Vfb≤3V 0.7 0.9 1.1 mA Shutdown delay current Idelay Ta=25°C, 5V≤Vfb≤VSD 4.0 5.0 6.0 µA OVER CURRENT PROTECTION SECTION Over current protection IL(max) Max. inductor current 3.08 3.5 3.92 A UVLO SECTION Start threshold voltage Vth(H) - 14 15 16 V Minimum operating voltage Vth(L) After turn on 9 10 11 V TOTAL STANDBY CURRENT SECTION Start current IST VCC=14V 0.1 0.3 0.4 mA Operating supply current (control part only) IOPR Ta=25°C 6 12 18 mA VCC zener voltage VZ ICC=20mA 30 32.5 35 V SHUTDOWN SECTION Shutdown Feedback voltage VSD - 6.9 7.5 8.1 V Thermal shutdown temperature (Tj) (1) TSD - 140 160 - °C Over voltage protection voltage VOVP - 23 25 28 V KA1M0565R/KA1H0565R 5 Typical Performance Characteristics (These characteristic graphs are normalized at Ta=25°C) Fig.1 Operating Frequency 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 -25 0 25 50 75 100 125 150 Fosc Fig.2 Feedback Source Current 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 -25 0 25 50 75 100 125 150 Ifb Fig.3 Operating Current 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 -25 0 25 50 75 100 125 150 Iop Fig.4 Max Inductor Current 0.8 0.85 0.9 0.95 1 1.05 1.1 -25 0 25 50 75 100 125 150 Ipeak Fig.5 Start up Current 0.5 0.7 0.9 1.1 1.3 1.5 -25 0 25 50 75 100 125 150 Istart Fig.6 Start Threshold Voltage 0.85 0.9 0.95 1 1.05 1.1 1.15 -25 0 25 50 75 100 125 150 Vstart Temperature [°C] Temperature [°C] Temperature [°C] Temperature [°C] Temperature [°C]Temperature [°C] Figure 1. Operating Frequency Figure 2. Feedback Source Current Figure 3. Operating Current Figure 4. Max. Inductor Current Figure 5. Start up Current Figure 6. Start Threshold Voltage IL(MAX) IST Vth(H) IFB lOPR KA1M0565R/KA1H0565R 6 Typical Performance Characteristics (Continued) (These characteristic graphs are normalized at Ta=25°C) Fig.7 Stop Threshold Voltage 0.85 0.9 0.95 1 1.05 1.1 1.15 -25 0 25 50 75 100 125 150 Vstop Fig.8 Maximum Duty Cycle 0.85 0.9 0.95 1 1.05 1.1 1.15 -25 0 25 50 75 100 125 150 Dmax Fig.9 Vcc Zener Voltage 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 -25 0 25 50 75 100 125 150 Vz Fig.10 Shutdown Feedback Voltage 0.85 0.9 0.95 1 1.05 1.1 1.15 -25 0 25 50 75 100 125 150 Vsd Fig.11 Shutdown Delay Current 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 -25 0 25 50 75 100 125 150 Idelay Fig.12 Over Voltage Protection 0.85 0.9 0.95 1 1.05 1.1 1.15 -25 0 25 50 75 100 125 150 Vovp Temperature [°C] Temperature [°C] Temperature [°C] Temperature [°C] Temperature [°C]Temperature [°C] Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle Figure 9. VCC Zener Voltage Figure 10. Shutdown Feedback Voltage Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection Vth(L) KA1M0565R/KA1H0565R 7 Typical Performance Characteristics (Continued) (These characteristic grahps are normalized at Ta=25°C) Fig.14 Drain Source Turn-on Resistance 0 0.5 1 1.5 2 2.5 -25 0 25 50 75 100 125 150 Rdson Temperature [°C] Figure 13. Drain Source Turn-on Resistance KA1M0565R/KA1H0565R 8 Package Dimensions TO-220F-4L KA1M0565R/KA1H0565R 9 Package Dimensions (Continued) TO-220F-4L (Forming) KA1M0565R/KA1H0565R 10 Ordering Information TU : Non Forming Type YDTU : Forming Type Product Number Package Rating Fosc KA1M0565R-TU TO-220F-4L 650V, 5A 67kHz KA1M0565R-YDTU TO-220F-4L(Forming) KA1H0565R-TU TO-220F-4L 650V, 5A 100kHz KA1H0565R-YDTU TO-220F-4L(Forming) KA1M0565R/KA1H0565R 11 KA1M0565R/KA1H0565R 9/7/00 0.0m 001 Stock#DSxxxxxxxx  2000 Fairchild Semiconductor International LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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