NTE3040
Optoisolator
NPN Transistor Output
Description:
The NTE3040 is a gallium arsenide, infrared emitting diode in a 6–Lead DIP type package coupled
with a silicon phototransistor.
Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified)
Infrared Emitting Diode
Power Dissipation, PD 200mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25°C ambient 2.6mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Current (Continuous), IC 60mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Current (Peak), IC 3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (Pulse Width 1µsec, 300pps)
Reverse Voltage, VR 3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phototransistor
Power Dissipation, PD 200mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25°C ambient 2.6mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector to Emitter Voltage, VCEO 30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector to Base Voltage, VCBO 70V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter to Collector Voltage, VECO 7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current (Continuous), IC 100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device
Storage Temperature, Tstg –55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature, Topr –55° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Soldering Temperature (10 seconds) +260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Surge Isolation Voltage (Input to Output)
(Peak) 1500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(RMS) 1060V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C, unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Infrared Emitting Diode
Forward Voltage VF IF = 10mA – 1.1 1.5 V
Reverse Current IR VR = 3V – – 10 mA
Capacitance CJ V = 0, f = 1MHZ – 50 – pf
Electrical Characteristics (Cont’d): (TA = +25°C, unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Phototransistor
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IF = 0 30 – – V
Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA, IF = 0 70 – – V
Emitter–Collector Breakdown Voltage V(BR)ECO IE = 100µA, IF = 0 7 – – V
Collector Dark Current ICEO VCE = 10V, IF = 0 – 5 50 nA
Capacitance CJ VCE = 10V, f = 1MHZ – 2 – pf
Coupled Characteristics
DC Current Transfer Ratio CTR IF = 10mA, VCE = 10V 6 – – %
Collector–Emitter Saturation Voltage VCEO(sat) IF = 60mA, IC = 1.6mA 100 – – V
Isolation Resistance R(I–O) V(I–O) = 500VDC 100 – – GΩ
Input to Output Capacitance C(I–O) V(I–O) = 0, f = 1MHZ – – 2 pf
Switching Speeds tr, tf VCE = 10V,
Ω
ICE = 2mA – 5 – µs
RL = 100Ω ICB = 50µA – 3 – µs
.260
(6.6)
Max
.350
(8.89)
Max
.350 (8.89)
Max
.300 (7.62)
.200 (5.08)
Max
.085 (2.16) Max
.070 (1.78) Max
.100 (2.54)
1 2 3
5 46
Emitter
Collector
Base1
2
Anode
Cathode
3N.C.
6
5
4
Pin Connection Diagram