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VIPER22A_[www.ic5.cn]

2012-07-28 16页 pdf 289KB 57阅读

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VIPER22A_[www.ic5.cn] September 2002 1/15 VIPer22ADIP VIPer22AS LOW POWER OFF LINE SMPS PRIMARY SWITCHER ® TYPICAL POWER CAPABILITY n FIXED 60 KHZ SWITCHING FREQUENCY n 9V TO 38V WIDE RANGE VDD VOLTAGE n CURRENT MODE CONTROL n AUXILIARY UNDERVOLTAGE LOCKOUT WITH HYSTERESIS n HIGH...
VIPER22A_[www.ic5.cn]
September 2002 1/15 VIPer22ADIP VIPer22AS LOW POWER OFF LINE SMPS PRIMARY SWITCHER ® TYPICAL POWER CAPABILITY n FIXED 60 KHZ SWITCHING FREQUENCY n 9V TO 38V WIDE RANGE VDD VOLTAGE n CURRENT MODE CONTROL n AUXILIARY UNDERVOLTAGE LOCKOUT WITH HYSTERESIS n HIGH VOLTAGE START UP CURRENT SOURCE n OVERTEMPERATURE, OVERCURRENT AND OVERVOLTAGE PROTECTION WITH AUTORESTART DESCRIPTION The VIPer22A combines a dedicated current mode PWM controller with a high voltage Power MOSFET on the same silicon chip. Typical applications cover off line power supplies for battery charger adapters, standby power supplies for TV or monitors, auxiliary supplies for motor control, etc. The internal control circuit offers the following benefits: – Large input voltage range on the VDD pin accommodates changes in auxiliary supply voltage. This feature is well adapted to battery charger adapter configurations. – Automatic burst mode in low load condition. – Overvoltage protection in hiccup mode. Mains type SO-8 DIP-8 European (195 - 265 Vac) 12 W 20 W US / Wide range (85 - 265 Vac) 7 W 12 W ORDER CODES PACKAGE TUBE T&R SO-8 VIPer22AS VIPer22AS13TR DIP-8 VIPer22ADIP - SO-8 DIP-8 BLOCK DIAGRAM ON/OFF 0.23 V DRAIN SOURCE VDD PWM LATCH 60kHz OSCILLATOR BLANKING + _8/14.5V _ + FF S R1 R4 Q R3 FB REGULATOR INTERNAL SUPPLY OVERVOLTAGE LATCH OVERTEMP. DETECTOR 1 kΩ 42V _ + R2 FFS R Q 230 Ω VIPer22ADIP / VIPer22AS 2/15 PIN FUNCTION CURRENT AND VOLTAGE CONVENTIONS CONNECTION DIAGRAM Name Function VDD Power supply of the control circuits. Also provides a charging current during start up thanks to a high voltage current source connected to the drain. For this purpose, an hysteresis comparator monitors the VDD voltage and provides two thresholds: - VDDon: Voltage value (typically 14.5V) at which the device starts switching and turns off the start up current source. - VDDoff: Voltage value (typically 8V) at which the device stops switching and turns on the start up current source. SOURCE Power MOSFET source and circuit ground reference. DRAIN Power MOSFET drain. Also used by the internal high voltage current source during start up phase for charging the external VDD capacitor. FB Feedback input. The useful voltage range extends from 0V to 1V, and defines the peak drain MOSFET current. The current limitation, which corresponds to the maximum drain current, is obtained for a FB pin shorted to the SOURCE pin. IDD ID IFB VDD VFB VD FB VDD DRAIN SOURCE CONTROL VIPer22A 1 2 3 4 DRAIN DRAIN DRAIN DRAIN 8 7 6 5 DRAIN DRAIN DRAIN DRAIN 1 2 3 4 8 7 6 5 FB VDD SOURCE FB VDD SOURCE SOURCE SOURCE SO-8 DIP8 VIPer22ADIP / VIPer22AS 3/15 ABSOLUTE MAXIMUM RATINGS Note: 1. This parameter applies when the start up current source is off. This is the case when the VDD voltage has reached VDDon and remains above VDDoff. 2. This parameter applies when the start up current source is on. This is the case when the VDD voltage has not yet reached VDDon or has fallen below VDDoff. THERMAL DATA Note: 1. When mounted on a standard single-sided FR4 board with 200 mm² of Cu (at least 35 µm thick) connected to all DRAIN pins. ELECTRICAL CHARACTERISTICS (Tj=25°C, VDD=18V, unless otherwise specified) POWER SECTION Note: 1. On clamped inductive load Symbol Parameter Value Unit VDS(sw) Switching Drain Source Voltage (Tj=25 ... 125°C) (See note 1) -0.3 ... 730 V VDS(st) Start Up Drain Source Voltage (Tj=25 ... 125°C) (See note 2) -0.3 ... 400 V ID Continuous Drain Current Internally limited A VDD Supply Voltage 0 ... 50 V IFB Feedback Current 3 mA VESD Electrostatic Discharge: Machine Model (R=0Ω; C=200pF) Charged Device Model 200 1.5 V kV Tj Junction Operating Temperature Internally limited °C Tc Case Operating Temperature -40 to 150 °C Tstg Storage Temperature -55 to 150 °C Symbol Parameter Max Value Unit Rthj-case Thermal Resistance Junction-Pins for : SO-8 DIP-8 25 15 °C/W Rthj-amb Thermal Resistance Junction-Ambient for : SO-8 (See note 1) DIP-8 (See note 1) 55 45 °C/W Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain-Source Voltage ID=1mA; VFB=2V 730 V IDSS Off State Drain Current VDS=500V; VFB=2V; Tj=125°C 0.1 mA RDSon Static Drain-Source On State Resistance ID=0.4A ID=0.4A; Tj=100°C 15 17 31 Ω tf Fall Time ID=0.2A; VIN=300V (See fig.1) (See note 1) 100 ns tr Rise Time ID=0.4A; VIN=300V (See fig.1) (See note 1) 50 ns Coss Drain Capacitance VDS=25V 40 pF VIPer22ADIP / VIPer22AS 4/15 ELECTRICAL CHARACTERISTICS (Tj=25°C, VDD=18V, unless otherwise specified) SUPPLY SECTION Note: 1. These test conditions obtained with a resistive load are leading to the maximum conduction time of the device. OSCILLATOR SECTION PWM COMPARATOR SECTION OVERTEMPERATURE SECTION Symbol Parameter Test Conditions Min. Typ. Max. Unit IDDch Start Up Charging Current VDS=100V; VDD=0V ...VDDon (See fig. 2) -1 mA IDDoff Start Up Charging Current in Thermal Shutdown VDD=5V; VDS=100V Tj > TSD - THYST 0 mA IDD0 Operating Supply Current Not Switching IFB=2mA 3 5 mA IDD1 Operating Supply CurrentSwitching IFB=0.5mA; ID=50mA (Note 1) 4.5 mA DRST Restart Duty Cycle (See fig. 3) 16 % VDDoff VDD Undervoltage Shutdown Threshold (See fig. 2 & 3) 7 8 9 V VDDon VDD Start Up Threshold (See fig. 2 & 3) 13 14.5 16 V VDDhyst VDD Threshold Hysteresis (See fig. 2) 5.8 6.5 7.2 V VDDovp VDD Overvoltage Threshold 38 42 46 V Symbol Parameter Test Conditions Min. Typ. Max. Unit FOSC Oscillator Frequency Total Variation VDD=VDDoff ... 35V; Tj=0 ... 100°C 54 60 66 kHz Symbol Parameter Test Conditions Min. Typ. Max. Unit GID IFB to ID Current Gain (See fig. 4) 560 IDlim Peak Current Limitation VFB=0V (See fig. 4) 0.56 0.7 0.84 A IFBsd IFB Shutdown Current (See fig. 4) 0.9 mA RFB FB Pin Input Impedance ID=0mA (See fig. 4) 1.2 kΩ td Current Sense Delay to Turn-Off ID=0.4A 200 ns tb Blanking Time 500 ns tONmin Minimum Turn On Time 700 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit TSD Thermal Shutdown Temperature (See fig. 5) 140 170 °C THYST Thermal Shutdown Hysteresis (See fig. 5) 40 °C VIPer22ADIP / VIPer22AS 5/15 Figure 1 : Rise and Fall Time Figure 2 : Start Up VDD Current Figure 3 : Restart Duty Cycle ID VDS 90% 10% tfv trv t t L D 300V C FB VDD DRAIN SOURCE CONTROL VIPer22A C << Coss VDD VDDhyst VDDoff VDDon IDD0 IDDch VDS = 100 V Fsw = 0 kHz IDD t VDD VDDoff VDDon tCH tST DRST tST tST tCH+ -------------------------= 100V10µF FB VDD DRAIN SOURCE CONTROL VIPer22A 2V VIPer22ADIP / VIPer22AS 6/15 Figure 4 : Peak Drain Current vs. Feedback Current Figure 5 : Thermal Shutdown IFB 4mH 100V 100V 18V FB VDD DRAIN SOURCE CONTROL VIPer22A47nF GID IDpeak∆ IFB∆ -----------------------–= ID IDpeak t 1/FOSC IFB IDpeak IDlim IFB IFBsd RFB⋅ VFB The drain current limitation is obtained for VFB = 0 V, and a negative current is drawn from the FB pin. See the Application section for further details. 0 IFBsd t t VDD Tj VDDon TSD THYST Automatic start up VIPer22ADIP / VIPer22AS 7/15 Figure 6 : Switching Frequency vs Temperature Figure 7 : Current Limitation vs Temperature -20 0 20 40 60 80 100 120 Temperature (°C) 0.97 0.98 0.99 1 1.01 N o rm a liz e d Fr e qu en cy Vdd = 10V ... 35V -20 0 20 40 60 80 100 120 Temperature (°C) 0.94 0.95 0.96 0.97 0.98 0.99 1 1.01 1.02 1.03 1.04 N o rm a liz e d Cu rr e n t L im ita tio n Vin = 100V Vdd = 20V VIPer22ADIP / VIPer22AS 8/15 Figure 8 : Rectangular U-I output characteristics for battery charger RECTANGULAR U-I OUTPUT CHARACTERISTIC A complete regulation scheme can achieve combined and accurate output characteristics. Figure 8 presents a secondary feedback through an optocoupler driven by a TSM101. This device offers two operational amplifiers and a voltage reference, thus allowing the regulation of both output voltage and current. An integrated OR function performs the combination of the two resulting error signals, leading to a dual voltage and current limitation, known as a rectangular output characteristic. This type of power supply is especially useful for battery chargers where the output is mainly used in current mode, in order to deliver a defined charging rate. The accurate voltage regulation is also convenient for Li-ion batteries which require both modes of operation. WIDE RANGE OF VDD VOLTAGE The VDD pin voltage range extends from 9V to 38V. This feature offers a great flexibility in design to achieve various behaviors. In figure 8 a forward configuration has been chosen to supply the device with two benefits: – as soon as the device starts switching, it immediately receives some energy from the auxiliary winding. C5 can be therefore reduced and a small ceramic chip (100 nF) is sufficient to insure the filtering function. The total start up time from the switch on of input voltage to output voltage presence is dramatically decreased. – the output current characteristic can be maintained even with very low or zero output voltage. Since the TSM101 is also supplied in forward mode, it keeps the current regulation up whatever the output voltage is.The VDD pin voltage may vary as much as the input voltage, that is to say with a ratio of about 4 for a wide range application. T1 D3 C5 C4 - + D4C3 T2F1 C1 C10 - + - + Vref Vcc GND U2 TSM101 R6 R9 R10 R4 C9 R7 R5 R8 C8 R3 ISO1 D2 D5 R2 C7 R1 C2 D1 FB VDD DRAIN SOURCE CONTROL U1 VIPerX2A C6 AC IN DCOUT GND VIPer22ADIP / VIPer22AS 9/15 FEEDBACK PIN PRINCIPLE OF OPERATION A feedback pin controls the operation of the device. Unlike conventional PWM control circuits which use a voltage input (the inverted input of an operational amplifier), the FB pin is sensitive to current. Figure 9 presents the internal current mode structure. The Power MOSFET delivers a sense current Is which is proportional to the main current Id. R2 receives this current and the current coming from the FB pin. The voltage across R2 is then compared to a fixed reference voltage of about 0.23 V. The MOSFET is switched off when the following equation is reached: By extracting IS: Using the current sense ratio of the MOSFET GID : The current limitation is obtained with the FB pin shorted to ground (VFB = 0 V). This leads to a negative current sourced by this pin, and expressed by: By reporting this expression in the previous one, it is possible to obtain the drain current limitation IDlim: In a real application, the FB pin is driven with an optocoupler as shown on figure 9 which acts as a pull up. So, it is not possible to really short this pin to ground and the above drain current value is not achievable. Nevertheless, the capacitor C is averaging the voltage on the FB pin, and when the optocoupler is off (start up or short circuit), it can be assumed that the corresponding voltage is very close to 0 V. For low drain currents, the formula (1) is valid as long as IFB satisfies IFB< IFBsd, where IFBsd is an internal threshold of the VIPer22A. If IFB exceeds this threshold the device will stop switching. This is represented on figure 4, and IFBsd value is specified in the PWM COMPARATOR SECTION. Actually, as soon as the drain current is about 12% of Idlim, that is to say 85 mA, the device will enter a burst mode operation by missing switching cycles. This is especially important when the converter is lightly loaded. It is then possible to build the total DC transfer function between ID and IFB as shown on figure 10. This figure also takes into account the internal blanking time and its associated minimum turn on time. This imposes a minimum drain current under which the device is no more able to control it in a linear way. This drain current depends on the primary inductance value of the transformer and the input voltage. Two cases may occur, depending on the value of this current versus the fixed 85 mA value, as described above. START UP SEQUENCE This device includes a high voltage start up current source connected on the drain of the device. As soon as a voltage is applied on the input of the converter, this start up current source is activated as long as VDD is lower than VDDon. When reaching VDDon, the start up current source is switched off and the device begins to operate by turning on and off its main power MOSFET. As the FB pin does not receive any current from the optocoupler, the device operates at full current capacity and the output voltage rises until reaching Figure 9 : Internal Current Control Structure 60kHz OSCILLATOR PWM LATCH S Q R 0.23V Id DRAIN SOURCE FB R1 R2C +Vdd Secondary feedback IFB Is 1 kΩ 230 Ω R2 IS IFB+( )⋅ 0.23V= IS 0.23V R2 -------------- IFB–= ID GID IS⋅ GID 0.23V R2 -------------- IFB–  ⋅= = IFB 0.23V R1 --------------–= IDlim GID 0.23V 1 R2 ------ 1 R1 ------+  ⋅ ⋅= Figure 10 : IFB Transfer function IFBsd IDlim IFBtONmin V 2 ⋅ IN L--------------------------------------- tONmin V 1 ⋅ IN L--------------------------------------- 85mA IDpeak 0 Part masked by the IFBsd threshold VIPer22ADIP / VIPer22AS 10/15 the regulation point where the secondary loop begins to send a current in the optocoupler. At this point, the converter enters a regulated operation where the FB pin receives the amount of current needed to deliver the right power on secondary side. This sequence is shown in figure 11. Note that during the real starting phase tss, the device consumes some energy from the VDD capacitor, waiting for the auxiliary winding to provide a continuous supply. If the value of this capacitor is too low, the start up phase is terminated before receiving any energy from the auxiliary winding and the converter never starts up. This is illustrated also in the same figure in dashed lines. OVERVOLTAGE THRESHOLD An overvoltage detector on the VDD pin allows the VIPer22A to reset itself when VDD exceeds VDDovp. This is illustrated in figure 12, which shows the whole sequence of an overvoltage event. Note that this event is only latched for the time needed by VDD to reach VDDoff, and then the device resumes normal operation automatically. Figure 11 : Start Up Sequence t t IFB VDDon t VOUT VDD VDDoff tss Figure 12 : Overvoltage Sequence t t VDS VDDon VDD VDDoff VDDovp VIPer22ADIP / VIPer22AS 11/15 DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A 1.75 0.068 a1 0.1 0.25 0.003 0.009 a2 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 c1 45 (typ.) D 4.8 5 0.188 0.196 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4 0.14 0.157 L 0.4 1.27 0.015 0.050 M 0.6 0.023 S 8 (max.) L1 0.8 1.2 0.031 0.047 1 SO-8 MECHANICAL DATA VIPer22ADIP / VIPer22AS 12/15 DIM. mm. MIN. TYP MAX. A 5.33 A1 0.38 A2 2.92 3.30 4.95 b 0.36 0.46 0.56 b2 1.14 1.52 1.78 c 0.20 0.25 0.36 D 9.02 9.27 10.16 E 7.62 7.87 8.26 E1 6.10 6.35 7.11 e 2.54 eA 7.62 eB 10.92 L 2.92 3.30 3.81 Package Weight Gr. 470 P001 Plastic DIP-8 MECHANICAL DATA VIPer22ADIP / VIPer22AS 13/15 1 SO-8 TUBE SHIPMENT (no suffix) All dimensions are in mm. Base Q.ty 100 Bulk Q.ty 2000 Tube length (± 0.5) 532 A 3.2 B 6 C (± 0.1) 0.6 TAPE AND REEL SHIPMENT (suffix “13TR”) All dimensions are in mm. Base Q.ty 2500 Bulk Q.ty 2500 A (max) 330 B (min) 1.5 C (± 0.2) 13 F 20.2 G (+ 2 / -0) 12.4 N (min) 60 T (max) 18.4 TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 All dimensions are in mm. Tape width W 12 Tape Hole Spacing P0 (± 0.1) 4 Component Spacing P 8 Hole Diameter D (± 0.1/-0) 1.5 Hole Diameter D1 (min) 1.5 Hole Position F (± 0.05) 5.5 Compartment Depth K (max) 4.5 Hole Spacing P1 (± 0.1) 2 Top cover tape End Start No componentsNo components Components 500mm min 500mm minEmpty components pockets saled with cover tape. User direction of feed REEL DIMENSIONS C B A VIPer22ADIP / VIPer22AS 14/15 11 DIP-8 TUBE SHIPMENT (no suffix) All dimensions are in mm. Base Q.ty 20 Bulk Q.ty 1000 Tube length (± 0.5) 532 A 8.4 B 11.2 C (± 0.1) 0.8 A B C VIPer22ADIP / VIPer22AS 15/15 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics  2002 STMicroelectronics - Printed in ITALY- All Rights Reserved. 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