AD8014电流反馈400M放大器

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. a AD8014 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: © Analog Devices, Inc., 400 MHz Low Power High Performance Amplifier FUNCTIONAL BLOCK DIAGRAMSFEATURES Low Cost Low Power: 1.15 mA Max for 5 V Supply High Speed 400 MHz, –3 dB Bandwidth (G = +1) 4000 V/ms Slew Rate 60 ns Overload Recovery Fast Settling Time of 24 ns Drive Video Signals on 50 V Lines Very Low Noise 3.5 nV/ Ö Hz and 5 pA/ Ö Hz 5 nV/Ö Hz Total Input Referred Noise @ G = +3 w/500 V Feedback Resistor Operates on +4.5 V to +12 V Supplies Low Distortion –70 dB THD @ 5 MHz Low, Temperature-Stable DC Offset Available in SOIC-8 and SOT-23-5 APPLICATIONS Photo-Diode Preamp Professional and Portable Cameras Hand Sets DVD/CD Handheld Instruments A-to-D Driver Any Power-Sensitive High Speed System PRODUCT DESCRIPTION The AD8014 is a revolutionary current feedback operational amplifier that attains new levels of combined bandwidth, power, output drive and distortion. Analog Devices, Inc. uses a propri- etary circuit architecture to enable the highest performance amplifier at the lowest power. Not only is it technically superior, but is low priced, for use in consumer electronics. This general purpose amplifier is ideal for a wide variety of applications including battery operated equipment. The AD8014 is a very high speed amplifier with 400 MHz, –3 dB bandwidth, 4000 V/ m s slew rate, and 24 ns settling time. The AD8014 is a very stable and easy to use amplifier with fast overload recovery. The AD8014 has extremely low voltage and current noise, as well as low distortion, making it ideal for use in wide-band signal processing applications. For a current feedback amplifier, the AD8014 has extremely low offset voltage and input bias specifications as well as low drift. The input bias current into either input is less than 15 m A at +25°C with a typical drift of less than 50 nA/°C over the industrial temperature range. The offset voltage is 5 mV max with a typical drift less than 10 m V/°C. For a low power amplifier, the AD8014 has very good drive capability with the ability to drive 2 V p-p video signals on 75 W or 50 W series terminated lines and still maintain more than 135 MHz, 3 dB bandwidth. SOIC-8 (R) 1 2 3 4 8 7 6 5AD8014 NC NC –IN –VS NC +IN NC = NO CONNECT VOUT +VS SOT-23-5 (RT) 1VOUT AD8014 –VS +IN 2 3 4 5 +VS –IN Rev. C ctufts Typewritten Text 781/461-3113 ctufts Typewritten Text ctufts Typewritten Text ctufts Typewritten Text 2010 ctufts Typewritten Text ctufts Typewritten Text –2– AD8014–SPECIFICATIONS AD8014AR/RT Parameter Conditions Min Typ Max Units DYNAMIC PERFORMANCE –3 dB Bandwidth Small Signal G = +1, VO = 0.2 V p-p, RL = 1 k W 400 480 MHz G = –1, VO = 0.2 V p-p, RL = 1 k W 120 160 MHz –3 dB Bandwidth Large Signal VO = 2 V p-p 140 180 MHz VO = 2 V p-p, RF = 500 W 170 210 MHz VO = 2 V p-p, RF = 500 W , RL = 50 W 130 MHz 0.1 dB Small Signal Bandwidth VO = 0.2 V p-p, RL = 1 kW 12 MHz 0.1 dB Large Signal Bandwidth VO = 2 V p-p, RL = 1 kW 20 MHz Slew Rate, 25% to 75%, VO = 4 V Step RL = 1 kW , RF = 500 W 4600 V/ m s RL = 1 kW 2800 V/ m s G = –1, RL = 1 kW , RF = 500 W 4000 V/ m s G = –1, RL = 1 kW 2500 V/ m s Settling Time to 0.1% G = +1, VO = 2 V Step, RL = 1 kW 24 ns Rise and Fall Time 10% to 90% 2 V Step 1.6 ns G = –1, 2 V Step 2.8 ns Overload Recovery to Within 100 mV 0 V to ±4 V Step at Input 60 ns NOISE/HARMONIC PERFORMANCE Total Harmonic Distortion fC = 5 MHz, VO = 2 V p-p, RL = 1 k W –68 dB fC = 5 MHz, VO = 2 V p-p –51 dB fC = 20 MHz, VO = 2 V p-p –45 dB SFDR fC = 20 MHz, VO = 2 V p-p –48 dB Input Voltage Noise f = 10 kHz 3.5 nV/ Ö Hz Input Current Noise f = 10 kHz 5 pA/ Ö Hz Differential Gain Error NTSC, G = +2, RF = 500 W 0.05 % NTSC, G = +2, RF = 500 W , RL = 50 W 0.46 % Differential Phase Error NTSC, G = +2, RF = 500 W 0.30 Degree NTSC, G = +2, RF = 500 W , RL = 50 W 0.60 Degree Third Order Intercept f = 10 MHz 22 dBm DC PERFORMANCE Input Offset Voltage 2 5 mV TMIN–TMAX 2 6 mV Input Offset Voltage Drift 10 m V/°C Input Bias Current +Input or –Input 5 15 m A Input Bias Current Drift 50 nA/°C Input Offset Current 5 – m A Open Loop Transresistance 800 1300 kW INPUT CHARACTERISTICS Input Resistance +Input 450 kW Input Capacitance +Input 2.3 pF Input Common-Mode Voltage Range ±3.8 ±4.1 V Common-Mode Rejection Ratio VCM = ±2.5 V –52 –57 dB OUTPUT CHARACTERISTICS Output Voltage Swing RL = 150 W – 3.4 ±3.8 V RL = 1 kW – 3.6 ±4.0 V Output Current VO = ±2.0 V 40 50 mA Short Circuit Current 70 mA Capacitive Load Drive for 30% Overshoot 2 V p-p, RL = 1 kW , RF = 500 W 40 pF POWER SUPPLY Operating Range ±2.25 ±5 ±6.0 V Quiescent Current 1.15 1.3 mA Power Supply Rejection Ratio ±4 V to ±6 V –55 –58 dB Specifications subject to change without notice. (@ TA = +258C, VS = 65 V, RL = 150 V, RF = 1 kV, Gain = +2, unless otherwise noted) Rev. C –3– AD8014 AD8014AR/RT Parameter Conditions Min Typ Max Units DYNAMIC PERFORMANCE –3 dB Bandwidth Small Signal G = +1, VO = 0.2 V p-p, RL = 1 k W 345 430 MHz G = –1, VO = 0.2 V p-p, RL = 1 k W 100 135 MHz –3 dB Bandwidth Large Signal VO = 2 V p-p 75 100 MHz VO = 2 V p-p, RF = 500 W 90 115 MHz VO = 2 V p-p, RF = 500 W , RL = 75 W 100 MHz 0.1 dB Small Signal Bandwidth VO = 0.2 V p-p, RL = 1 kW 10 MHz 0.1 dB Large Signal Bandwidth VO = 2 V p-p 20 MHz Slew Rate, 25% to 75%, VO = 2 V Step RL = 1 kW , RF = 500 W 3900 V/ m s RL = 1 kW 1100 V/ m s G = –1, RL = 1 kW , RF = 500 W 1800 V/ m s G = –1, RL = 1 kW 1100 V/ m s Settling Time to 0.1% G = +1, VO = 2 V Step, RF = 1 kW 24 ns Rise and Fall Time 10% to 90% 2 V Step 1.9 ns G = –1, 2 V Step 2.8 ns Overload Recovery to Within 100 mV 0 V to ±2 V Step at Input 60 ns NOISE/HARMONIC PERFORMANCE Total Harmonic Distortion fC = 5 MHz, VO = 2 V p-p, RL = 1 k W –70 dB fC = 5 MHz, VO = 2 V p-p –51 dB fC = 20 MHz, VO = 2 V p-p –45 dB SFDR fC = 20 MHz, VO = 2 V p-p –47 dB Input Voltage Noise f = 10 kHz 3.5 nV/ Ö Hz Input Current Noise f = 10 kHz 5 pA/ Ö Hz Differential Gain Error NTSC, G = +2, RF = 500 W 0.06 % NTSC, G = +2, RF = 500 W , RL = 50 W 0.05 % Differential Phase Error NTSC, G = +2, RF = 500 W 0.03 Degree NTSC, G = +2, RF = 500 W , RL = 50 W 0.30 Degree Third Order Intercept f = 10 MHz 22 dBm DC PERFORMANCE Input Offset Voltage 2 5 mV TMIN–TMAX 2 6 mV Input Offset Voltage Drift 10 m V/°C Input Bias Current +Input or –Input 5 15 m A Input Bias Current Drift 50 nA/°C Input Offset Current 5 – m A Open Loop Transresistance 750 1300 kW INPUT CHARACTERISTICS Input Resistance +Input 450 kW Input Capacitance +Input 2.3 pF Input Common-Mode Voltage Range 1.2 1.1 to 3.9 3.8 V Common-Mode Rejection Ratio VCM = 1.5 V to 3.5 V –52 –57 dB OUTPUT CHARACTERISTICS Output Voltage Swing RL = 150 W to 2.5 V 1.4 1.1 to 3.9 3.6 V RL = 1 kW to 2.5 V 1.2 0.9 to 4.1 3.8 V Output Current VO = 1.5 V to 3.5 V 30 50 mA Short Circuit Current 70 mA Capacitive Load Drive for 30% Overshoot 2 V p-p, RL = 1 kW , RF = 500 W 55 pF POWER SUPPLY Operating Range 4.5 5 12 V Quiescent Current 1.0 1.15 mA Power Supply Rejection Ratio 4 V to 5.5 V –55 –58 dB Specifications subject to change without notice. (@ TA = +258C, VS = +5 V, RL = 150 V, RF = 1 kV, Gain = +2, unless otherwise noted)SPECIFICATIONS Rev. C AD8014 –4– CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8014 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. WARNING! ESD SENSITIVE DEVICE ABSOLUTE MAXIMUM RATINGS1 Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12.6 V Internal Power Dissipation2 Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . 0.75 W SOT-23-5 Package (RT) . . . . . . . . . . . . . . . . . . . . . . 0.5 W Input Voltage Common Mode . . . . . . . . . . . . . . . . . . . . . .±VS Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ±2.5 V Output Short Circuit Duration . . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C Operating Temperature Range . . . . . . . . . . . –40°C to +85°C Lead Temperature (Soldering 10 sec) . . . . . . . . . . . . .+300°C ESD (Human Body Model) . . . . . . . . . . . . . . . . . . . . +1500 V NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause perma- nent damage to the device. This is a stress rating only, functional operation of the device at these or any other conditions above listed in the operational section of this specification is not implied. Exposure to Absolute Maximum Ratings for any extended periods may affect device reliability. 2 Specification is for device in free air at 25°C. 8-Lead SOIC Package q JA = 155°C/W. 5-Lead SOT-23 Package q JA = 240°C/W. MAXIMUM POWER DISSIPATION The maximum power that can be safely dissipated by the AD8014 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic. This is approximately +150°C. Even temporarily ex- ceeding this limit may cause a shift in parametric performance due to a change in the stresses exerted on the die by the pack- age. Exceeding a junction temperature of +175°C may result in device failure. The output stage of the AD8014 is designed for large load cur- rent capability. As a result, shorting the output to ground or to power supply sources may result in a very large power dissipa- tion. To ensure proper operation it is necessary to observe the maximum power derating tables. Table I. Maximum Power Dissipation vs. Temperature Ambient Temp Power Watts Power Watts 8C SOT-23-5 SOIC –40 0.79 1.19 –20 0.71 1.06 0 0.63 0.94 +20 0.54 0.81 +40 0.46 0.69 +60 0.38 0.56 +80 0.29 0.44 +100 0.21 0.31 Rev. C AD8014 –5– Typical Performance Characteristics– FREQUENCY – MHz 12 –15 1 100010010 –12 –9 –6 –3 3 6 9 0 G = +1 VO = 200mV p-p RF = 1kV RL = 1kV VS = 65V VS = +5V 15 N O R M A LI ZE D G A IN – d B Figure 1. Frequency Response, G = +1, VS = ±5 V and +5 V VS = 65V G = +2 RF = 500V VO = 2V p-p FREQUENCY – MHz 12 –15 1 100010010 –12 –9 –6 –3 3 6 9 0 RL = 50V RL = 75V N O R M A LI ZE D G A IN – d B Figure 2. Frequency Response, G = +2, VO = 2 V p-p VS = 65V G = +2 RF = 1kV RL = 1kV FREQUENCY – MHz 12 –12 10 1000100 0 –9 –6 –3 3 6 9 VO = 0.5V p-p VO = 1V p-p VO = 4V p-p VO = 2V p-p N O R M A LI ZE D G A IN – d B Figure 3. Bandwidth vs. Output Voltage Level— Dual Supply, G = +2 FREQUENCY – MHz 2.0 –7.0 1 100010010 –6.0 –5.0 –4.0 –3.0 –1.0 0 1.0 –2.0 N O R M A LI ZE D G A IN – d B VS = 65V G = –1 RF = 1kV RL = 1kV VO = 2V VO = 4V VO = 0.2V VO = 0.5V VO = 1V Figure 4. Bandwidth vs. Output Level—Gain of –1, Dual Supply FREQUENCY – MHz 12 1 100010010 –12 –9 –6 –3 3 6 9 0 N O R M A LI ZE D G A IN – d B VS = +5V G = +2 RF = 1kV RL = 1kV VO = 1V p-p VO = 3V p-p VO = 2V p-p VO = 0.5V p-p Figure 5. Bandwidth vs. Output Level—Single Supply, G = +2 FREQUENCY – MHz 2 1 100010010 –8 –7 –5 –4 –2 0 1 –3 –6 –1 N O R M A LI ZE D G A IN – d B VS = +5V G = –1 RF = 1kV RL = 1kV VO = 2V p-p VO = 0.2V p-p VO = 4V p-p VO = 0.5V p-p Figure 6. Bandwidth vs. Output Level—Single Supply, Gain of –1 Rev. C AD8014 –6– VS = 65V G = +2 VO = 2V p-p RL = 150V FREQUENCY – MHz 7.5 1 100010010 6.5 7.0 RF = 300V RF = 500V RF = 600V RF = 750V RF = 1kV 6.0 3.0 3.5 4.5 5.0 5.5 4.0 N O R M A LI ZE D G A IN – d B Figure 7. Bandwidth vs. Feedback Resistor—Dual Supply FREQUENCY – MHz 7.5 1 100010010 7.0 6.5 4.0 4.5 5.5 6.0 5.0N O R M A LI ZE D G A IN – d B VS = +5V G = +2 VO = 2V p-p RL = 150V RF = 300V RF = 500V RF = 750V RF = 1kV Figure 8. Bandwidth vs. Feedback Resistor—Single Supply G = +2 RF = 1kV RL = 1kV VO = 200mV p-p 1 100010010 6.1 6.5 6.2 6.6 VS = 65V VS = +5V 5.6 6.3 6.7 6.8 6.4 FREQUENCY – MHz N O R M A LI ZE D G A IN – d B 6.0 5.7 5.8 5.9 Figure 9. Gain Flatness—Small Signal G = +2 V = 2V p-p RF = 500V RL = 150V FREQUENCY – MHz 1 100010010 5.3 5.8 5.4 5.9 VS = 65V VS = +5V 6.2 5.2 5.5 5.6 6.0 6.1 5.7 G A IN F LA TN E S S – d B Figure 10. Gain Flatness—Large Signal VS = ±5V RF = 1kV RL = 1kV VO = 200mV p-p 1 100010010 –15 –3 –12 0 G = +1 G = +2 9 –18 –9 3 6 –6 G = +10 FREQUENCY – MHz G A IN – d B Figure 11. Bandwidth vs. Gain—Dual Supply, RF = 1 kW VS = +5V RF = 1kV RL = 1kV VO = 200mV p-p 1 100010010 –15 –3 –12 0 G = +1 G = +2 9 –18 –9 3 6 –6 G = +10 FREQUENCY – MHz G A IN – d B Figure 12. Bandwidth vs. Gain—Single Supply Rev. C AD8014 –7– VS = 65V G = +2 RF = 1kV FREQUENCY – MHz 0 –100 0.01 1000 –50 0.10 1 10 100 –40 –30 –20 –10 –60 –70 –80 –90 –PSRR +PSRR P S R R – d B Figure 13. PSRR vs. Frequency FREQUENCY – MHz –20 0.1 1000 –50 1 10 100 –75 –70 –65 –60 –55 –45 –40 –35 –30 –25 C M R R – d B VS = +5V VS = ±5V Figure 14. CMRR vs. Frequency FREQUENCY – MHz –90 1 10010 D IS TO R TI O N – d B c –70 –50 –30 3RD RL = 150V 3RD RL = 1kV DISTORTION BELOW NOISE FLOOR 2ND RL = 1kV 2ND RL = 150V ␣ ␣ Figure 15. Distortion vs. Frequency; VS = ±5 V, G = +2 140 120 100 80 60 20 0 40 G A IN – d B V 0 P H A S E – D eg re es –40 –80 –120 –160 –200 –240 –280 1k 10k 100k 1M 10M 100M 1G FREQUENCY – Hz PHASE GAIN Figure 16. Transimpedance Gain and Phase vs. Frequency FREQUENCY – MHz 100 10 1 0.1 0.01 1 100010 1000.10.01 O U TP U T R E S IS TA N C E – V Figure 17. Output Resistance vs. Frequency, VS = ±5 V and +5 V Figure 18. Settling Time Rev. C AD8014 –8– Note: On Figures 19 and 20 RF = 500 W , RS = 50 W and CL = 20 pF. APPLICATIONS CD ROM and DVD Photodiode Preamp High speed Multi-X CD ROM and DVD drives require high frequency photodiode preamps for their read channels. To mini- mize the effects of the photodiode capacitance, the low imped- ance of the inverting input of a current feedback amplifier is advantageous. Good group delay characteristics will preserve the pulse response of these pulses. The AD8014, having many ad- vantages, can make an excellent low cost, low noise, low power, and high bandwidth photodiode preamp for these applications. Figure 21 shows the circuit that was used to imitate a photo- diode preamp. A photodiode for this application is basically a high impedance current source that is shunted by a small ca- pacitance. In this case, a high voltage pulse from a Picosecond Pulse Labs Generator that is ac-coupled through a 20 kW resis- tor is used to simulate the high impedance current source of a photodiode. This circuit will convert the input voltage pulse into a small charge package that is converted back to a voltage by the AD8014 and the feedback resistor. In this case the feedback resistor chosen was 1.74 kW , which is a compromise between maintaining bandwidth and providing sufficient gain in the preamp stage. The circuit preserves the pulse shape very well with very fast rise time and a minimum of overshoot as shown in Figure 22. AD8014 1.74kV 20kV 49.9V 49.9V +5V –5V OUTPUT (103 PROBE) (NO LOAD) 0.1mF INPUT Figure 21. AD8014 as a Photodiode Preamp INPUT DIV 1 2OUTPUT 500mV/DIV CH1 20.0V CH2 500mV M 25.0ns CH4 380mV TEK RUN: 2.0GS/s ET AVERAGE T[ ] Figure 22. Pulse Response Figure 19. Large Signal Step Response; VS = ±5 V, VO = 4 V Step Figure 20. Large Signal Step Response; VS = +5 V, VO = 2 V Step Rev. C CTufts Typewritten Text 20V/ CTufts Typewritten Text CTufts Typewritten Text CTufts Typewritten Text CTufts Typewritten Text CTufts Typewritten Text CTufts Typewritten Text CTufts Typewritten Text CTufts Typewritten Text CTufts Typewritten Text CTufts Typewritten Text CTufts Typewritten Text CTufts Typewritten Text AD8014 –9– DRIVING CAPACITIVE LOADS The AD8014 was designed primarily to drive nonreactive loads. If driving loads with a capacitive component is desired, best settling response is obtained by the addition of a small series resistance as shown in Figure 26. The accompanying graph shows the optimum value for RSERIES vs. Capacitive Load. It is worth noting that the frequency response of the circuit when driving large capacitive loads will be dominated by the passive roll-off of RSERIES and CL. 40 30 20 0 10 15 20 25 CL – pF 10 R S E R IE S – V 5 Figure 26. Driving Capacitive Load Choosing Feedback Resistors Changing the feedback resistor can change the performance of the AD8014 like any current feedback op amp. The table below illustrates common values of the feedback resistor and the per- formance which results. Table II. –3 dB BW –3 dB BW VO = 60.2 V VO = 60.2 V Gain RF RG RL = 1 kV RL = 150 V +1 1 kW Open 480 430 +2 1 kW 1 kW 280 260 +10 1 kW 111 W 50 45 –1 1 kW 1 kW 160 150 –2 1 kW 499 W 140 130 –10 1 kW 100 W 45 40 +2 2 kW 2 kW 200* 180* +2 750 W 750 W 260* 210* +2 499 W 499 W 280* 230* *VO = ±1 V. Video Drivers The AD8014 easily drives series terminated cables with video signals. Because the AD8014 has such good output drive you can parallel two or three cables driven from the same AD8014. Figure 23 shows the differential gain and phase driving one video cable. Figure 24 shows the differential gain and phase driving two video cables. Figure 25 shows the differential gain and phase driving three video cables. 0.10 0.05 0.00 –0.05 –0.10 0.60 0.40 0.20 –0.20 –0.40 0.00 –0.60 0.00 0.02 0.04 0.05 0.05 0.05 0.04 0.04 0.04 0.04 0.03 0.00 0.01 0.10 0.21 0.26 0.28 0.29 0.30 0.30 0.30 0.30 1ST 2ND 3RD 4TH 5TH 6TH 7TH 8TH 9TH 10TH 11TH D IF FE R E N TI A L P H A S E – D eg re es D IF FE R E N TI A L G A IN – % Figure 23. Differential Gain and Phase RF = 500, ±5 V, RL = 150 W , Driving One Cable, G = +2 0.30 0.20 0.10 –0.10 –0.20 0.60 0.40 0.20 –0.20 –0.40 0.00 –0.60 0.00 –0.02 0.03 0.05 0.06 0.06 0.05 0.05 0.07 0.10 0.14 0.00 0.07 0.24 0.40 0.43 0.44 0.43 0.40 0.35 0.26 0.16 1ST 2ND 3RD 4TH 5TH 6TH 7TH 8TH 9TH 10TH 11TH 0.00 –0.30 D IF FE R E N TI A L P H A S E – D eg re es D IF FE R E N TI A L G A IN – % Figure 24. Differential Gain and Phase RF = 500, ±5 V, RL = 75 W , Driving Two Cables, G = +2 0.60 0.40 0.20 –0.40 –0.60 0.00 –0.80 0.00 0.44 0.52 0.54 0.52 0.52 0.50 0.48 0.47 0.44 0.45 0.00 0.10 0.32 0.53 0.57 0.59 0.58 0.56 0.54 0.51 0.48 1ST 2ND 3RD 4TH 5TH 6TH 7TH 8TH 9TH 10TH 11TH –0.20 0.80 0.60 0.40 0.20 –0.40 –0.60 0.00 –0.80 –0.20 0.80 D IF FE R E N TI A L P H A S E – D eg re es D IF FE R E N TI A L G A IN – % Figure 25. Differential Gain and Phase RF = 500, ±5 V, RL = 50 W , Driving Three Cables, G = +2 Rev. C AD8014 -10- Rev. C OUTLINE DIMENSIONS CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. COMPLIANT TO JEDEC STANDARDS MS-012-AA 01 2