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PIN-16-CSL

2014-03-26 6页 pdf 2MB 25阅读

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PIN-16-CSL �� PIN-08CSL-F Plastic Encapsulated Series Lead Frame Molded Photodiodes n FEATURES • High Density Package • Rugged Molded Package • Low Capacitance • Low Dark Current • Lead Frame Standard • SMT • Molded Lens Feature • Side Lookers • Filter on Chip (70...
PIN-16-CSL
�� PIN-08CSL-F Plastic Encapsulated Series Lead Frame Molded Photodiodes n FEATURES • High Density Package • Rugged Molded Package • Low Capacitance • Low Dark Current • Lead Frame Standard • SMT • Molded Lens Feature • Side Lookers • Filter on Chip (700nm Cutoff) n APPLICATIONS • Bar Code Readers • Industrial Counters • Measurement and Control • IR Remote Control • Reflective Switches OSI Optoelectronics offers a line of high quality and reliability plastic encapsulated photodiodes. These molded devices are available in a variety of shapes and sizes of photodetectors and packages, including industry standard T1 and T1�/4, flat and lensed side lookers as well as a surface mount version (SOT- ��). They are excellent for mounting on PCB and hand held devices in harsh environments. They have an excellent response in the NIR spectrum and are also available with visible blocking compounds, transmitting only in the 700- 1100 nm range. They offer fast switching time, low capacitance as well as low dark current. They can be utilized in both photoconductive and photovoltaic modes of operation. ???:??? ????:ic17shop ??&qq:ic17@qq.com ???:??? ????:ic17shop ??&qq:ic17@qq.com �4 Plastic Encapsulated Series Typical Electro-Optical Specifications at TA=23ºC Tape and Reel Specifications for Surface Mount PIN-01(C)J and PIN-01(F)J ¶ For mechanical drawings please refer to pages 58 thru 69. * Non-Condensing temperature and Storage Range, Non-Condensing Environment. The “CSL-F” series ishomogeneous silicon photodiode and optical filter combination device. The filter coating is directly deposited onto the chip during wafer process. M o d e l N u m b e r Active Area Spectral Range (nm) Responsivity lP=970nm Capacitance (pF) 1 MHz Dark Current (nA) Reverse Voltage (V) Rise Time (ns) Temp.* Range (˚C) Package Style ¶ A re a ( m m 2 ) D im e n si o n s (m m ) (A/W) 0 V -10 V -10 V -10 V peak λ 50 Ω O p e ra ti n g S to ra g e typ. typ. typ. typ. max. max. typ. PIN-01-CJ 0.2 0.4 Sq 350-1100 0.40 21 4 2 30 20 11 -2 5 ~ + 8 5 -4 0 ~ 1 0 0 59 / Resin Molded PIN-01-FJ 700-1100 PIN-01-CT3 0.2 0.4 Sq 350-1100 58 / Resin Molded PIN-01-FT3 700-1100 PIN-01-CT5 0.2 0.4 Sq 350-1100 PIN-01-FT5 700-1100 PIN-01-CLSL 0.2 0.4 Sq 350-1100 0.45 61 / Resin Molded PIN-01-FLSL 700-1100 0.40 PIN-0.81-LLS 0.81 1.02 350-1100 0.55 10 2 62 / Leadless Ceramic PIN-0.81-CSL 60 / Resin Molded PIN-4.0-LLS 3.9 2.31x1.68 350-1100 60 10 5 62 / Leadless Ceramic PIN-4.0-CSL 60 / Resin Molded PIN-07-CSL 8.1 2.84 Sq 350-1100 85 15 50 57 / Resin Molded PIN-07-FSL 700-1100 PIN-07-CSLR 8.1 2.84 Sq 350-1100 56 / Resin Molded PIN-07-FSLR 700-1100 PIN-08-CSL-F 8.4 2.90 Sq 350-720 0.43@660nm .. 25 .. 10 75 60 / Resin Molded PIN-8.0-LLS 8.4 2.90 Sq 350-1100 0.55 100 25 10 30 50 62 / Leadless Ceramic PIN-8.0-CSL 60 / Resin Molded PIN-16-CSL 16 4.00 Sq 330 55 5 100 ???:??? ????:ic17shop ??&qq:ic17@qq.com ???:??? ????:ic17shop ??&qq:ic17@qq.com 56 Photodiode Care and Handling Instructions AVOID DIRECT LIGHT Since the spectral response of silicon photodiode includes the visible light region, care must be taken to avoid photodiode exposure to high ambient light levels, particularly from tungsten sources or sunlight. During shipment from OSI Optoelectronics, your photodiodes are packaged in opaque, padded containers to avoid ambient light exposure and damage due to shock from dropping or jarring. AVOID SHARP PHYSICAL SHOCK Photodiodes can be rendered inoperable if dropped or sharply jarred. The wire bonds are delicate and can become separated from the photodiode’s bonding pads when the detector is dropped or otherwise receives a sharp physical blow. CLEAN WINDOWS WITH OPTICAL GRADE CLOTH / TISSUE Most windows on OSI Optoelectronics photodiodes are either silicon or quartz. They should be cleaned with isopropyl alcohol and a soft (optical grade) pad. OBSERVE STORAGE TEMPERATURES AND HUMIDITY LEVELS Photodiode exposure to extreme high or low storage temperatures can affect the subsequent performance of a silicon photodiode. Storage temperature guidelines are presented in the photodiode performance specifications of this catalog. Please maintain a non-condensing environment for optimum performance and lifetime. OBSERVE ELECTROSTATIC DISCHARGE (ESD) PRECAUTIONS OSI Optoelectronics photodiodes, especially with IC devices (e.g. Photops) are considered ESD sensitive. The photodiodes are shipped in ESD protective packaging. When unpacking and using these products, anti-ESD precautions should be observed. DO NOT EXPOSE PHOTODIODES TO HARSH CHEMICALS Photodiode packages and/or operation may be impaired if exposed to CHLOROTHENE, THINNER, ACETONE, or TRICHLOROETHYLENE. INSTALL WITH CARE Most photodiodes in this catalog are provided with wire or pin leads for installation in circuit boards or sockets. Observe the soldering temperatures and conditions specified below: Photodiodes in plastic packages should be given special care. Clear plastic packages are more sensitive to environmental stress than those of black plastic. Storing devices in high humidity can present problems when soldering. Since the rapid heating during soldering stresses the wire bonds and can cause wire to bonding pad separation, it is recommended that devices in plastic packages to be baked for �4 hours at 85°C. The leads on the photodiode SHOULD NOT BE FORMED. If your application requires lead spacing modification, please contact OSI Optoelectronics Applications group at (�10)978-0516 before forming a product’s leads. Product warranties could be voided. Soldering Iron: Soldering �0 W or less Temperature at tip of iron �00°C or lower. Dip Soldering: Bath Temperature: �60±5°C. Immersion Time: within 5 Sec. Soldering Time: within � Sec. Vapor Phase Soldering: DO NOT USE Reflow Soldering: DO NOT USE ???:??? ????:ic17shop ??&qq:ic17@qq.com ???:??? ????:ic17shop ??&qq:ic17@qq.com For Further Assistance Please Call One of Our Experienced Sales and Applications Engineers 310-978-0516 - Or - On the Internet at www.osioptoelectronics.com 57 1. Parameter Definitions: A = Distance from top of chip to top of glass. a = Photodiode Anode. B = Distance from top of glass to bottom of case. c = Photodiode Cathode (Note: cathode is common to case in metal package products unless otherwise noted). W = Window Diameter. F.O.V. = Filed of View (see definition below). 2. Dimensions are in inches (1 inch = 25.4 mm). 3. Pin diameters are 0.018 ± 0.002" unless otherwise specified. 4. Tolerances (unless otherwise noted) General: 0.XX ±0.01" 0.XXX ±0.005" Chip Centering: ±0.010" Dimension ‘A’: ±0.015" 5. Windows All ‘UV’ Enhanced products are provided with QUARTZ glass windows, 0.0�7 ± 0.00�" thick. All ‘XUV’ products are provided with removable windows. All ‘DLS’ PSD products are provided with A/R coated glass windows. All ‘FIL’ photoconductive and photovoltaic products are epoxy filled instead of glass windows. ???:??? ????:ic17shop ??&qq:ic17@qq.com ???:??? ????:ic17shop ??&qq:ic17@qq.com 67 Mechanical Specifications All units in inches. PIN-0.81CSL PIN-4.0CSL PIN-8.0CSL PIN-08CSL PIN-16CSL PIN-O8CSL-F PIN-0.1CJ PIN-01FJ PIN-01CLSL PIN-01FLSL PIN-01CT3 PIN-01FT3 PIN-01CT5 PIN-01FT5 PIN-07CSL PIN-07FSL PIN-07SLR PIN-07FSLR ???:??? ????:ic17shop ??&qq:ic17@qq.com ???:??? ????:ic17shop ??&qq:ic17@qq.com 68 Mechanical Specifications All units in inches. Leadless Ceramic62 Products: PIN-0.81-LLS PIN-4.0-LLS PIN-8.0-LLS OS-P085 OS-W200A OS-W200B OS-P-190 Products: DLED-660/ 880-CSL-2 DLED-660/ 895-CSL-2 DLED-660/ 905-CSL-2 DLED-660/ 905-CSL-3 DLED-660/ 940-CSL-3 Products: DLED-660/ 880-LLS-2 DLED-660/ 895-LLS-2 DLED-660/ 905-LLS-2 DLED-660/ 905-LLS-3 DLED-660/ 940-LLS-3 Lead Frame Molded63 Leadless Ceramic64 Plastic Molded65 Products: Products: Products: Plastic Molded66 Plastic Molded67 Active Area 0.025 0.060 MAX.0.210 0.035 0.200 0.335 2c1a 0.220 0.07 0.032 0.500 0.0100.050 0.100 DLED-XXX/XXX-CSL-3 IR660nm 660nm Back-to-Back Parallel Connections Common Anode Connection IR DLED-XXX/XXX-CSL-2 0.113 0.225 0.225 0.025 0.060 Max. 0.040 0.050 0.225 Back-to-Back Parallel Connections IR 660nm DLED-XXX/XXX-LLS-2 Common Anode Connection IR660nm DLED-XXX/XXX-LLS-3 Top View Bottom View Bottom View 0.172 pitch = 0.05 0.175 0.53 0.005 0.170 0.085 0.154 0.05 0.100 0.244 0.355 0.345 14.9 MIN (4 PLCS) STRIP 0.16±0.01 BLACK WIRE 0.305 0.295 0.205 0.153 0.13 0.050 WHITE WIRE YELLOW WIRE RED WIRE 0.420 0.400 0.200 0.105 0.080 0.170 0.25 (-) (+) CATHODE EMITTER Bottom View (L.E.D.) ANODE (PHOTOTRANSISTOR) 4 1 23 EMITTER IDENTIFICATION DOT SENSOR IDENTIFICATION DOT 0.20 1 2 3 456 0.19 0.40 0.40 0.50 0.20 min 0.10 typ PIN Description 1 Emitter Cathode 2 Emitter Anode 3 Emitter Anode 4 Phototransistor Collector 5 Phototransistor Emitter 6 Phototransistor Emitter Pinout ???:??? ????:ic17shop ??&qq:ic17@qq.com ???:??? ????:ic17shop ??&qq:ic17@qq.com
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