��
PIN-08CSL-F
Plastic Encapsulated Series
Lead Frame Molded Photodiodes
n FEATURES
• High Density Package
• Rugged Molded Package
• Low Capacitance
• Low Dark Current
• Lead Frame Standard
• SMT
• Molded Lens Feature
• Side Lookers
• Filter on Chip (700nm Cutoff)
n APPLICATIONS
• Bar Code Readers
• Industrial Counters
• Measurement and Control
• IR Remote Control
• Reflective Switches
OSI Optoelectronics offers a line of high quality and reliability plastic
encapsulated photodiodes. These molded devices are available in a
variety of shapes and sizes of photodetectors and packages, including
industry standard T1 and T1�/4, flat and lensed side lookers as well as a
surface mount version (SOT- ��). They are excellent for mounting on PCB
and hand held devices in harsh environments.
They have an excellent response in the NIR spectrum and are also
available with visible blocking compounds, transmitting only in the 700-
1100 nm range. They offer fast switching time, low capacitance as well
as low dark current. They can be utilized in both photoconductive and
photovoltaic modes of operation.
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�4
Plastic Encapsulated Series
Typical Electro-Optical Specifications at TA=23ºC
Tape and Reel Specifications for Surface Mount PIN-01(C)J and PIN-01(F)J
¶ For mechanical drawings please refer to pages 58 thru 69.
* Non-Condensing temperature and Storage Range, Non-Condensing Environment.
The “CSL-F” series ishomogeneous silicon photodiode and optical filter combination device. The filter coating is directly deposited onto the chip during wafer process.
M
o
d
e
l
N
u
m
b
e
r Active Area
Spectral
Range
(nm)
Responsivity
lP=970nm
Capacitance
(pF) 1 MHz
Dark Current
(nA) Reverse
Voltage
(V)
Rise
Time
(ns)
Temp.*
Range
(˚C)
Package
Style ¶
A
re
a
(
m
m
2
)
D
im
e
n
si
o
n
s
(m
m
) (A/W) 0 V -10 V -10 V
-10 V
peak λ
50 Ω
O
p
e
ra
ti
n
g
S
to
ra
g
e
typ. typ. typ. typ. max. max. typ.
PIN-01-CJ
0.2 0.4 Sq
350-1100
0.40
21 4
2
30
20
11
-2
5
~
+
8
5
-4
0
~
1
0
0
59 / Resin Molded
PIN-01-FJ 700-1100
PIN-01-CT3
0.2 0.4 Sq
350-1100
58 / Resin Molded
PIN-01-FT3 700-1100
PIN-01-CT5
0.2 0.4 Sq
350-1100
PIN-01-FT5 700-1100
PIN-01-CLSL
0.2 0.4 Sq
350-1100 0.45
61 / Resin Molded
PIN-01-FLSL 700-1100 0.40
PIN-0.81-LLS
0.81 1.02 350-1100
0.55
10 2
62 / Leadless Ceramic
PIN-0.81-CSL 60 / Resin Molded
PIN-4.0-LLS
3.9 2.31x1.68 350-1100 60 10
5
62 / Leadless Ceramic
PIN-4.0-CSL 60 / Resin Molded
PIN-07-CSL
8.1 2.84 Sq
350-1100
85 15 50
57 / Resin Molded
PIN-07-FSL 700-1100
PIN-07-CSLR
8.1 2.84 Sq
350-1100
56 / Resin Molded
PIN-07-FSLR 700-1100
PIN-08-CSL-F 8.4 2.90 Sq 350-720 0.43@660nm .. 25 .. 10 75 60 / Resin Molded
PIN-8.0-LLS
8.4 2.90 Sq
350-1100 0.55
100 25 10
30
50
62 / Leadless Ceramic
PIN-8.0-CSL
60 / Resin Molded
PIN-16-CSL 16 4.00 Sq 330 55 5 100
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56
Photodiode Care and Handling Instructions
AVOID DIRECT LIGHT
Since the spectral response of silicon photodiode includes the visible light region, care must be taken to avoid photodiode exposure to high ambient
light levels, particularly from tungsten sources or sunlight. During shipment from OSI Optoelectronics, your photodiodes are packaged in opaque, padded
containers to avoid ambient light exposure and damage due to shock from dropping or jarring.
AVOID SHARP PHYSICAL SHOCK
Photodiodes can be rendered inoperable if dropped or sharply jarred. The wire bonds are delicate and can become separated from the photodiode’s
bonding pads when the detector is dropped or otherwise receives a sharp physical blow.
CLEAN WINDOWS WITH OPTICAL GRADE CLOTH / TISSUE
Most windows on OSI Optoelectronics photodiodes are either silicon or quartz. They should be cleaned with isopropyl alcohol and a soft (optical grade)
pad.
OBSERVE STORAGE TEMPERATURES AND HUMIDITY LEVELS
Photodiode exposure to extreme high or low storage temperatures can affect the subsequent performance of a silicon photodiode. Storage temperature
guidelines are presented in the photodiode performance specifications of this catalog. Please maintain a non-condensing environment for optimum
performance and lifetime.
OBSERVE ELECTROSTATIC DISCHARGE (ESD) PRECAUTIONS
OSI Optoelectronics photodiodes, especially with IC devices (e.g. Photops) are considered ESD sensitive. The photodiodes are shipped in ESD protective
packaging. When unpacking and using these products, anti-ESD precautions should be observed.
DO NOT EXPOSE PHOTODIODES TO HARSH CHEMICALS
Photodiode packages and/or operation may be impaired if exposed to CHLOROTHENE, THINNER, ACETONE, or TRICHLOROETHYLENE.
INSTALL WITH CARE
Most photodiodes in this catalog are provided with wire or pin leads for installation in circuit boards or sockets. Observe the soldering temperatures and
conditions specified below:
Photodiodes in plastic packages should be given special care. Clear plastic packages are more sensitive to environmental stress than those of black
plastic. Storing devices in high humidity can present problems when soldering. Since the rapid heating during soldering stresses the wire bonds and can
cause wire to bonding pad separation, it is recommended that devices in plastic packages to be baked for �4 hours at 85°C.
The leads on the photodiode SHOULD NOT BE FORMED. If your application requires lead spacing modification, please contact OSI Optoelectronics
Applications group at (�10)978-0516 before forming a product’s leads. Product warranties could be voided.
Soldering Iron: Soldering �0 W or less
Temperature at tip of iron �00°C or lower.
Dip Soldering: Bath Temperature: �60±5°C.
Immersion Time: within 5 Sec.
Soldering Time: within � Sec.
Vapor Phase Soldering: DO NOT USE
Reflow Soldering: DO NOT USE
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For Further Assistance
Please Call One of Our Experienced
Sales and Applications Engineers
310-978-0516
- Or -
On the Internet at
www.osioptoelectronics.com
57
1. Parameter Definitions:
A = Distance from top of chip to top of glass.
a = Photodiode Anode.
B = Distance from top of glass to bottom of case.
c = Photodiode Cathode
(Note: cathode is common to case in metal package products unless otherwise noted).
W = Window Diameter.
F.O.V. = Filed of View (see definition below).
2. Dimensions are in inches (1 inch = 25.4 mm).
3. Pin diameters are 0.018 ± 0.002" unless otherwise specified.
4. Tolerances (unless otherwise noted)
General: 0.XX ±0.01"
0.XXX ±0.005"
Chip Centering: ±0.010"
Dimension ‘A’: ±0.015"
5. Windows
All ‘UV’ Enhanced products are provided with QUARTZ glass windows,
0.0�7 ± 0.00�" thick.
All ‘XUV’ products are provided with removable windows.
All ‘DLS’ PSD products are provided with A/R coated glass windows.
All ‘FIL’ photoconductive and photovoltaic products are epoxy filled instead of
glass windows.
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67
Mechanical Specifications
All units in inches.
PIN-0.81CSL
PIN-4.0CSL
PIN-8.0CSL
PIN-08CSL
PIN-16CSL
PIN-O8CSL-F
PIN-0.1CJ
PIN-01FJ
PIN-01CLSL
PIN-01FLSL
PIN-01CT3
PIN-01FT3
PIN-01CT5
PIN-01FT5
PIN-07CSL
PIN-07FSL
PIN-07SLR
PIN-07FSLR
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68
Mechanical Specifications
All units in inches.
Leadless Ceramic62
Products:
PIN-0.81-LLS
PIN-4.0-LLS
PIN-8.0-LLS
OS-P085 OS-W200A
OS-W200B
OS-P-190
Products:
DLED-660/
880-CSL-2
DLED-660/
895-CSL-2
DLED-660/
905-CSL-2
DLED-660/
905-CSL-3
DLED-660/
940-CSL-3
Products:
DLED-660/
880-LLS-2
DLED-660/
895-LLS-2
DLED-660/
905-LLS-2
DLED-660/
905-LLS-3
DLED-660/
940-LLS-3
Lead Frame Molded63 Leadless Ceramic64
Plastic Molded65
Products: Products: Products:
Plastic Molded66 Plastic Molded67
Active Area
0.025
0.060 MAX.0.210
0.035
0.200
0.335
2c1a
0.220
0.07
0.032
0.500
0.0100.050
0.100
DLED-XXX/XXX-CSL-3
IR660nm
660nm
Back-to-Back
Parallel
Connections
Common
Anode
Connection
IR
DLED-XXX/XXX-CSL-2
0.113
0.225 0.225
0.025
0.060 Max.
0.040
0.050
0.225
Back-to-Back
Parallel
Connections
IR
660nm
DLED-XXX/XXX-LLS-2
Common
Anode
Connection
IR660nm
DLED-XXX/XXX-LLS-3
Top View
Bottom View Bottom View
0.172
pitch = 0.05
0.175 0.53
0.005
0.170
0.085
0.154
0.05
0.100 0.244
0.355
0.345
14.9 MIN
(4 PLCS)
STRIP 0.16±0.01
BLACK WIRE
0.305
0.295
0.205
0.153
0.13
0.050
WHITE WIRE
YELLOW WIRE
RED WIRE
0.420
0.400
0.200
0.105
0.080
0.170
0.25
(-)
(+)
CATHODE
EMITTER
Bottom View
(L.E.D.)
ANODE
(PHOTOTRANSISTOR)
4 1
23
EMITTER
IDENTIFICATION
DOT
SENSOR
IDENTIFICATION
DOT
0.20
1 2
3
456
0.19
0.40
0.40
0.50
0.20 min
0.10 typ
PIN Description
1 Emitter Cathode
2 Emitter Anode
3 Emitter Anode
4 Phototransistor Collector
5 Phototransistor Emitter
6 Phototransistor Emitter
Pinout
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