38
Dual Sandwich Detector Series
Two Color Photodiodes
n FEATURES
• Compact
• Hermetically Sealed
• Low Noise
• Wide Wavelength Range
• Remote Measurements
• w/ TEC
n APPLICATIONS
• Flame Temperature sensing
• Spectrophotometer
• Dual-wavelength detection
• IR Thermometers for Heat
Treating, induction heating,
and other metal parts
processing
Dual Sandwich Detectors or Two Color Detectors are mostly employed
for remote temperature measurements. The temperature is measured
by taking the ratio of radiation intensities of two adjacent wavelengths
and comparing them with the standard black body radiation curves.
The advantages of optical remote measurement have definitely made
these devices the perfect match for this type of measurements. They are
independent of emissivity and unaffected by contaminants in the field
of view or moving targets. In addition, measurements of targets out of
the direct line of sight and the ability to function from outside RF/EMI
interference or vacuum areas are possible. They also have the advantages
of overcoming obstructed target views, blockages from sight tubes,
channels or screens, atmospheric smoke, steam, or dust, dirty windows
as well as targets smaller than field of view and/or moving within the field
of view. These detectors can also be used in applications where wide
wavelength range of detection is needed.
OSI Optoelectronics offers three types of dual sandwich detectors. The
Silicon- Silicon sandwich, in which one silicon photodiode is placed on
top of the other, with the photons of shorter wavelengths absorbed in the
top silicon and the photons of longer wavelengths penetrating deeper,
absorbed by the bottom photodiode. For applications requiring a wider range of wavelength beyond 1.1 µm, an InGaAs photodiode replaces the bottom
photodiode. The Silicon-InGaAs version is also available with a two stage thermo-electric cooler for more accurate measurements by stabilizing the
temperature of the InGaAs detector.
All devices are designed for photovoltaic operation (no bias), however, they may be biased if needed, to the maximum reverse voltage specified. They are
ideal for coupling to an operational amplifier in the current mode. For further details refer to the “Photodiode Characteristics” section of this catalog.
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39
Active
Area P
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Shunt
Resistance
NEP D*
@ peak
R
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V
o
lt
a
g
e
Rise
Time
(µs)
Temp*
Range
(°C)
λλλλP 0 V -10 mV 0V, λλλλP 0V, λλλλP
nm
A/W pF MΩ (W/√√√√Hz) (cm√√√√Hz/W)
V
0 V
50 Ω
λλλλPM
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im
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(
m
m
)
Spectral
Range
(nm)
typ. typ. typ. min. typ. typ. typ. max. typ.
O
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S
to
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P
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¶
Non-Cooled
Si (top) 400-1100 950 0.45 1.3 e -14 1.7 e +13 10
PIN-DSS
Si
2.54 φ
950-1100 1060 0.12
70 50 500
4.8 e -14 4.7 e +12
5
150
Si (top) 2.54 φ 400-1100 950 0.55 § 450 150 1.9 e -14 § 1.2 e +13 § 5 4
PIN-DSIn
InGaAs 1.50 φ 1000-1800 1300 0.60 300 1.0 2.1 e -13 8.4 e +11 2 4
-4
0
~
+
1
0
0
-5
5
~
+
1
2
5
17 /
TO-5
Two Stage Thermoelectrically Cooled ‡
Si (top) 2.54 φ 400-1100 950 0.55 § 450 150 1.9 e -14 § 1.2 e +13 § 5 4
PIN-DSIn-TEC
InGaAs 1.5 φ 1000-1800 1300 0.60 300 1.0 2.1 e -13 8.4 e +11 2 4 -4
0
~
+
1
0
0
-5
5
~
+
1
2
5
24 /
TO-8
Thermistor Specifications
PARAMETER CONDITION SPECIFICATION
Temperature Range --- -100 ºC to +100 ºC
Nominal Resistance --- 1.25 KW @ 25 ºC
-100 ºC to -25 ºC ± 6.5 ºC
-25 ºC to +50 ºC ± 3.5 ºC
@ 25 ºC ± 1.5 ºC
Accuracy
+50 ºC to +100 ºC ± 6.7 ºC
Two Stage Thermo-electric Cooler Specifications
PARAMETER SYMBOL CONDITION SPECIFICATION
Vacuum 91
Maximum Achievable Temperature Difference TMAX (°C)
I = IMAX
QC = 0 Dry N2 83
Maximum Amount Of Heat Absorbed At The Cold Face QMAX (W) I = IMAX, = 0 0.92
MAX IMAX (A) --- 1.4
Voltage At MAX VMAX (V) --- 2.0
Dual Sandwich Detector Series
Typical Electro-Optical Specifications at TA=23ºC
§ @ 870 nm
‡ Thermo-Electric Cooler and Thermistor Specifications are specified in the tables below.
¶ For mechanical drawings please refer to pages 58 thru 69.
* Non-Condensing temperature and Storage Range, Non-Condensing Environment.
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For Further Assistance
Please Call One of Our Experienced
Sales and Applications Engineers
310-978-0516
- Or -
On the Internet at
www.osioptoelectronics.com
57
1. Parameter Definitions:
A = Distance from top of chip to top of glass.
a = Photodiode Anode.
B = Distance from top of glass to bottom of case.
c = Photodiode Cathode
(Note: cathode is common to case in metal package products unless otherwise noted).
W = Window Diameter.
F.O.V. = Filed of View (see definition below).
2. Dimensions are in inches (1 inch = 25.4 mm).
3. Pin diameters are 0.018 ± 0.002" unless otherwise specified.
4. Tolerances (unless otherwise noted)
General: 0.XX ±0.01"
0.XXX ±0.005"
Chip Centering: ±0.010"
Dimension ‘A’: ±0.015"
5. Windows
All ‘UV’ Enhanced products are provided with QUARTZ glass windows,
0.027 ± 0.002" thick.
All ‘XUV’ products are provided with removable windows.
All ‘DLS’ PSD products are provided with A/R coated glass windows.
All ‘FIL’ photoconductive and photovoltaic products are epoxy filled instead of
glass windows.
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60
Mechanical Specifications
All units in inches. Pinouts are bottom view.
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61
Mechanical Specifications
All units in inches. Pinouts are bottom view.
TO-522
Products:
XUV-005
Products:
XUV-020
XUV-035
Products:
PIN-DSIn-TEC
TO-823 TO-824
Special Ceramic / Plastic25
Products:
RD-100
RD-100A
UV-35P
UV-005EC
UV-035EC
UV-100EC
UV-005DC
UV-035DC
UV-100DC
XUV-50C
XUV-100C
OSD35-7CO
OSD35-LR-A
OSD35-LR-D
Products:
PIN-RD07
PIN-RD15
TO-826
Special Plastic27
Products:
PIN-220D
PIN-220DP
PIN-220DP/SB
Products:
XUV-100
BNC28
0.600
0.525
0.435
0.113
0.231
(W)
0.550
0.485
0.430
(W)
0.375
0.500
0.075
0.225
0.375
0.201
0.530
0.120
0.550
0.460
0.065
0.360
0.285
0.090
A
B
C
0.310
0.209
0.118
0.076
0.065
0.236
0.626
0.450
0.560
1.250
1.575
0.975
0.625
0.083
0.390
0.470
Notch
Indicates
Anode Pin
0.080
0.390 Min.
D
3a
3 1 3 1
1
5
4
81c
c a
3a 1c
3c
3 1
2
1a
2 Case
Pin Circle Dia.=0.295
Pin Circle Dia.=0.295
Pin Diameter=0.040
BNC Connector
Outer Contact = Cathode
Pin Circle Dia.=0.200
P/N A B C D
UV-005EC 0.400 0.350 0.030 0.280
UV-035EC 0.400 0.350 0.030 0.290
UV-100EC 0.650 0.590 0.048 0.500
UV-005DC 0.400 0.350 0.030 0.280
UV-035DC 0.400 0.350 0.030 0.290
UV-100DC 0.650 0.590 0.053 0.500
XUV-50C 0.650 0.590 0.027 0.490
XUV-100C 0.650 0.590 0.027 0.490
RD-100 0.650 0.590 0.027 0.490
RD-100A 0.650 0.590 0.027 0.490
UV-35P 0.390 0.345 0.050 0.275
Dimensions
1 TEC (-)
2 Thermistor
3 Thermistor
4 TEC (+)
5 Bottom InGaAs, Cathode
6 Bottom InGaAs, Anode
7 Top Silicon, Anode
8 Top Silicon, Cathode
Pinout
OSD35-7CO
OSD35-LR-A
OSD35-LR-D
0.390
0.390
0.390
0.350
0.350
0.350
0.290
0.290
0.290
---
---
---
Note: OSD35-prefix packages come with 0.31” (min.) leads
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