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UDT-455

2014-03-27 5页 pdf 2MB 23阅读

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UDT-455 �9 Photops™ Photodiode-Amplifier Hybrids n FEATURES • Detector/Amplifier Combined • Adjustable Gain/Bandwidth • Low Noise • Wide Bandwidth • DIP Package • Large Active Area n APPLICATIONS • General Purpose Light Detection • Laser Power Monitori...
UDT-455
�9 Photops™ Photodiode-Amplifier Hybrids n FEATURES • Detector/Amplifier Combined • Adjustable Gain/Bandwidth • Low Noise • Wide Bandwidth • DIP Package • Large Active Area n APPLICATIONS • General Purpose Light Detection • Laser Power Monitoring • Medical Analysis • Laser Communications • Bar Code Readers • Industrial Control Sensors • Pollution Monitoring • Guidance Systems • Colorimeter The Photop™ Series, combines a photodiode with an operational amplifier in the same package. Photops™ general-purpose detectors have a spectral range from either �50 nm to 1100 nm or �00 nm to 1100nm. They have an integrated package ensuring low noise output under a variety of operating conditions. These op-amps are specifically selected by OSI Optoelectronics engineers for compatibility to our photodiodes. Among many of these specific parameters are low noise, low drift and capability of supporting a variety of gains and bandwidths determined by the external feedback components. Operation from DC level to several MHz is possible in an either unbiased configuration for low speed, low drift applications or biased for faster response time. LN-Series Photops™ are to be used with OV-bias. Any modification of the above devices is possible. The modifications can be simply adding a bandpass optical filter, integration of additional chip (hybrid) components inside the same package, utilizing a different op-amp, photodetector replacement, modified package design and / or mount on PCB or ceramic. For your specific requirements, contact one of our Applications Engineers. ???:??? ????:ic17shop ??&qq:ic17@qq.com ???:??? ????:ic17shop ??&qq:ic17@qq.com �0 Photops™ (Photodiode Specifications) Typical Electro-Optical Specifications at TA=23ºC ¶ For mechanical drawings please refer to pages 58 thru 69. ** LN – Series Devices are to be used with a 0V Bias. * Non-Condensing temperature and Storage Range, Non-Condensing Environment. # OSI-515 replaces UDT-455HS M o d e l N u m b e r Active Area Responsivity (A/W) Capacitance (pF) Dark Current (nA) S h u n t R e si st a n ce (M Ω ) NEP (W/√Hz) R e v e rs e V o lt a g e Temp.* Range (°C) Package Style A re a (m m 2 ) D im e n si o n (m m ) 254 nm 970 nm 0 V -10 V -10 V -10 mV 0 V 254 nm -10 V 970 nm V O p e ra ti n g S to ra g e m in . ty p . m in . ty p . ty p . ty p . ty p . m a x . ty p . ty p . ty p . m a x . 350-1100 nm Spectral Range UDT-451 5.1 2.54 φ --- 0.60 0.65 85 15 0.25 3 --- 1.4 e -14 30** 0 ~ + 7 0 -3 0 ~ + 1 0 0 29 / DIP UDT-455 30 / TO-5UDT-455LN** OSI-515# UDT-020D 16 4.57 φ 330 60 0.5 10 1.9 e -14 31 / TO-8 UDT555D 100 11.3 φ 1500 300 2 25 3.9 e -14 32 / Special 200-1100 nm Spectral Range UDT-455UV 5.1 2.54 φ 0.10 0.14 --- 300 --- 100 9.2 e -14 --- 5** 30 / TO-5 UDT-455UV/LN** UDT-020UV 16 4.57 φ 1000 50 1.3 e -13 31 / TO-8 UDT-055UV 50 7.98 φ 2500 20 2.1 e -13 32 / Special UDT-555UV 100 11.3 φ 4500 10 2.9 e -13 32 / Special UDT-555UV/LN** Operational Amplifier Specifications Electro-Optical Specifications at TA=23 °C M o d e l N u m b e r Supply Voltage Quiescent Supply Current (mA) Input Offset Voltage T e m p . C o e ff ic ie n t In p u t O ff se t V o lt a g e Input Bias Current Gain Bandwidth Product Slew Rate Open Loop Gain, DC Input Noise Voltage Temp.* Range (°C) 1 0 0 H z 1 k H z 1 k H z ± 15 V mV µV / °C pA MHz V / µs V /mV nV/ √Hz fA/ √Hz m in . ty p . m a x . ty p . m a x . ty p . m a x . ty p . m a x . ty p . m a x . m in . ty p . m in . ty p . m in . ty p . ty p . ty p . ty p . UDT-451 --- ±15 ±18 1.4 2.5 3.0 6.0 10 --- 30 200 --- 4.0 --- 13 50 150 --- 18 10 UDT-455 --- ±15 ±18 2.8 5.0 0.5 3 4 30 ±80 ±400 3.0 5.4 5 9 50 200 20 15 10 UDT-455UV UDT-020D UDT-020UV OSI-515# --- ±15 ±18 6.5 7.2 1 3 10 --- ±15 ±40 23 26 125 140 3 6.3 --- 12 10 UDT-455LN** ±5 ±15 ±18 0.9 1.8 0.26 1 --- 20 0.15 0.3 0.5 1 0.5 3 50 2500 78 27 0.22 UDT-455UV/LN** UDT-055UV --- ±15 ±22 2.7 4.0 0.4 1 3 10 ±40 ±200 3.5 5.7 7.5 11 75 220 20 15 10UDT-555D UDT-555UV ???:??? ????:ic17shop ??&qq:ic17@qq.com ???:??? ????:ic17shop ??&qq:ic17@qq.com �1 UDT-455, UDT-555D, 555UV, 055UV OSI-515: pin 1 & 5 are N/C (No offset adjustment needed). UDT-020D, 020UV UDT-451, 455LN, 455UV/LN UDT-555UV/LN Photop Series Schematic Diagrams The output voltage is proportional to the light intensity of the light and is given by: (1) Frequency Response (Photodiode/Amplifier Combination) The frequency response of the photodiode / amplifier combination is determined by the characteristics of the photodetector, pre-amplifier as well as the feedback resistor (RF) and feedback capacitor (CF). For a known gain, (RF), the �dB frequency response of the detector/pre-amp combination is given by: (2) However, the desired frequency response is limited by the Gain Bandwidth Product (GBP) of the op-amp. In order to have a stable output, the values of the RF and CF must be chosen such that the �dB frequency response of the detector / pre-amp combination, be less than the maximum frequency of the op-amp, i.e. f�dB ≤ fmax. (3) where CA is the amplifier input capacitance. In conclusion, an example for frequency response calculations, is given below. For a gain of 108, an operating frequency of 100 Hz, and an op- amp with GBP of 5 MHz: (4) Thus, for CF = 15.9 pF, CJ = 15 pF and CA = 7 pF, fmax is about 14.5 kHz. Hence, the circuit is stable since f�dB ≤ fmax. For more detailed application specific discussions and further reading, refer to the APPLICATION NOTES INDEX in the catalog. Note: The shaded boxes represent the Photop™ components and their connections. The components outside the boxes are typical recommended connections and components. ???:??? ????:ic17shop ??&qq:ic17@qq.com ???:??? ????:ic17shop ??&qq:ic17@qq.com For Further Assistance Please Call One of Our Experienced Sales and Applications Engineers 310-978-0516 - Or - On the Internet at www.osioptoelectronics.com 57 1. Parameter Definitions: A = Distance from top of chip to top of glass. a = Photodiode Anode. B = Distance from top of glass to bottom of case. c = Photodiode Cathode (Note: cathode is common to case in metal package products unless otherwise noted). W = Window Diameter. F.O.V. = Filed of View (see definition below). 2. Dimensions are in inches (1 inch = 25.4 mm). 3. Pin diameters are 0.018 ± 0.002" unless otherwise specified. 4. Tolerances (unless otherwise noted) General: 0.XX ±0.01" 0.XXX ±0.005" Chip Centering: ±0.010" Dimension ‘A’: ±0.015" 5. Windows All ‘UV’ Enhanced products are provided with QUARTZ glass windows, 0.0�7 ± 0.00�" thick. All ‘XUV’ products are provided with removable windows. All ‘DLS’ PSD products are provided with A/R coated glass windows. All ‘FIL’ photoconductive and photovoltaic products are epoxy filled instead of glass windows. ???:??? ????:ic17shop ??&qq:ic17@qq.com ???:??? ????:ic17shop ??&qq:ic17@qq.com 6� Mechanical Specifications All units in inches. Pinouts are bottom view. UDT-455 UDT-455LN UDT-455UV UDT-455UV/LN OSI-515 OSI-515 pin 1 & 5 are N/C ???:??? ????:ic17shop ??&qq:ic17@qq.com ???:??? ????:ic17shop ??&qq:ic17@qq.com
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