桥式整流器

R GLASS PASSIVATED BRIDGE RECTIFIERS MB05S THRU MB10S * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * High surge current capability * UL file number:E252843 * High temper ature soldering guaranteed: 250 /10 seconds at 5 lbs.(2.3kg)tension CASE:Molded plastic body over passiv ated junctions Terminals:plated leads solderable per MIL - STD-750, Method 2026 Polarity:Polarity symbols marked on boby Mounting Position:Any Weight:0.0046 ounce,0.129grams TA=25 Maximum Ratings&Electrical Characteristics Ratings at 25 ambient temperature unless otherwise sp ecified UNITS VRRM VRMS VDC I(AV) IFSM VF IR CJ TJ.TSTG 50 35 50 100 70 100 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 Volts Volts Volts Amp Amps Volts uA pF 0.5 0.8 35.0 1.1 5.0 500 13.0 -55 to + 150 Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward output rectified 8.3ms Peak forward surge current 8.3ms single half sine-wave Maximum forward voltage @IF=0.5/0.8A Maximum reverse voltage Type junction capacitance VR=4.0V f=1.0MHz Operating junction and storage temperature range T =40A T =25 T =125 A A .187(4.75) .183(4.65) .100(2.53) .097(2.47) .098(2.5) 0.042(0.6) .223(5.8) .213(5.4) .154(3.9) .146(3.7) .008(0.2) .008(0.2) .276(7) .260(6.6) NOTES: 1.On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3mm)pads. 2.On aluminum substrate P.C.B. with an area of 0.8 x 0.8"(20x20mm) mounted on 0.05x0.05" (1.3x1.3mm) solder pads. 3. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts SHENZHEN TECH SEMICON DUCTOR CO.,LTDSHENZHEN TECH SEMICON DUCTOR CO.,LTD SYMB OLS MB05S MB1S MB2S MB4S MB6S MB8S MB10S Unit: inch(mm) 1 RATINGANDCHARACTERISTICCURVES (TA=25 UNLESSOTHERWISENOTED) MB05STHRUMB10S INSTANTANEOUS FORWARD VOLTAGE, VOLTS P E A K F O R W A R D S U R G E C U R R E N T A M P E R E S FIG.2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT NUMBER OF CYCLES AT 60Hz IN S T A N T A N E O U S F O R W A R D C U R R E N T A M P E R E S FIG. 3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS IN S T A N T A N E O U S R E V E R S E C U R R E N T (u A ) FIG. 4 - TYPICAL REVERS CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE, % JU N C T IO N C A PA C IT A N C E , p F 1 10 100 42 35 28 25 14 7 0 100 10 1.0 0.1 .01 0 20 40 60 80 100 T =125J T =25J 120 140 0.4 0.6 0.8 1.0 1.2 1.4 0.1 .01 1.0 10 100 10 1.5 10 1001 2 REVERSE VOLTAGE, VOLTS FIG. 5 TYPICAL JUNCTION CAPACITANCE 8.3ms single half sine-wave JEDEC Method AMBIENT TEMPERATURE, A V E R A G E F O R W A R D C U R R E N T , A M P E R E S FIG.1-DERATING CURVE OUTPUT RECTIFIED CURRENT 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 Aluminum substrate P.C.B. Glass epoxy P.C.B. RESISTIVE OR INDUCTIVE LOAD T =25 Pulse with 300 s 2% duty cycle J T =25 f=1.0MHz Ving=50mVp.p J 2