2012俄罗斯塑料展/2012俄罗斯塑胶展/2012俄罗斯橡胶展览会

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13003B TRANSISTOR( NPN ) FEATURES · power switching applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.9 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 1mA, IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 9 V Collector cut-off current ICBO VCB= 700V, IE=0 100 µA Collector cut-off current ICEO VCE= 400V, IB=0 50 µA Emitter cut-off current IEBO VEB= 7V, IC=0 10 µA DC current gain hFE VCE= 10V, IC= 0.4 A 20 40 VCE(sat)1 IC=1.5A,IB= 0.5A 3 V Collector-emitter saturation voltage VCE(sat)2 IC=0.5A, IB= 0.1A 0.8 V Base-emitter saturation voltage VBE(sat) IC=0.5A, IB=0.1A 1 V Transition Frequency fT VCE=10V,IC=100mA, f =1MHz 4 MHz Fall time tf IC=1A 0.7 µs Storage time ts IB1=-IB2=0.2A 4 µs CLASSIFICATION OF hFE Rank Range 20-25 25-30 30-35 35-40 1 2 3 TO-92 1. EMITTER 2. COLLECTOR 3. BASE Typical Characteristics 3DD13003B